Cleavage of Submicron Solid Films As a Method to Prepare Cross Sections from Heterostructures for High-Resolution Transmission Microscopy

被引：0
作者：
Vorob'ev, A. B. [1 ]
Gutakovsky, A. K. [1 ]
Prinz, V. Ya. [1 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2024年 / 60卷 / 04期
关键词：
transmission electron microscopy; atomic resolution; free-standing thin film; cross section; brittle crack; cleavage; EPITAXIAL GAAS/ALAS SUPERLATTICES; INTERFACE STRUCTURE; QUANTUM-WIRE; RECONSTRUCTION; SEMICONDUCTORS; GAAS(311); QUALITY;
D O I：
10.3103/S8756699024700511
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A method of preparation, which makes it possible to form defectless cross sections for transmission electron microscopy from heterostructures and ensures atomic resolution over a larger surface area, is described in details. The method is illustrated with examples of studies on complexly shaped heterointerfaces and selective oxidation and selective etching of superlattices.
引用
收藏
页码：447 / 456
页数：10
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