Cleavage of Submicron Solid Films As a Method to Prepare Cross Sections from Heterostructures for High-Resolution Transmission Microscopy

被引：0

作者：

Vorob'ev, A. B. ^{[1
]}

Gutakovsky, A. K. ^{[1
]}

Prinz, V. Ya. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2024年 / 60卷 / 04期

关键词：

transmission electron microscopy; atomic resolution; free-standing thin film; cross section; brittle crack; cleavage; EPITAXIAL GAAS/ALAS SUPERLATTICES; INTERFACE STRUCTURE; QUANTUM-WIRE; RECONSTRUCTION; SEMICONDUCTORS; GAAS(311); QUALITY;

D O I：

10.3103/S8756699024700511

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A method of preparation, which makes it possible to form defectless cross sections for transmission electron microscopy from heterostructures and ensures atomic resolution over a larger surface area, is described in details. The method is illustrated with examples of studies on complexly shaped heterointerfaces and selective oxidation and selective etching of superlattices.

引用

页码：447 / 456

页数：10

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