Signature of pressure-induced topological phase transition in ZrTe5

被引:0
|
作者
Kovacs-Krausz, Zoltan [1 ,2 ]
Nagy, Daniel [3 ]
Marffy, Albin [1 ,2 ]
Karpiak, Bogdan [4 ]
Tajkov, Zoltan [5 ,6 ]
Oroszlany, Laszlo [3 ,7 ]
Koltai, Janos [8 ]
Nemes-Incze, Peter [5 ]
Dash, Saroj P. [4 ]
Makk, Peter [1 ,9 ]
Csonka, Szabolcs [1 ,2 ]
Tovari, Endre [1 ,9 ]
机构
[1] Budapest Univ Technol & Econ, Inst Phys, Dept Phys, Budapest, Hungary
[2] MTA BME Superconducting Nanoelect Momentum Res Grp, Budapest, Hungary
[3] Eotvos Lorand Univ, Dept Phys Complex Syst, Budapest, Hungary
[4] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Gothenburg, Sweden
[5] Hungarian Res Network, Inst Tech Phys & Mat Sci, Ctr Energy Res, Budapest, Hungary
[6] Slovak Acad Sci, Inst Expt Phys, Ctr Low Temp Phys, Kosice, Slovakia
[7] Budapest Univ Technol & Econ, MTA BME Lendulet Topol & Correlat Res Grp, Budapest, Hungary
[8] Eotvos Lorand Univ, Dept Biol Phys, Budapest, Hungary
[9] MTA BME Correlated van der Waals Struct Momentum R, Budapest, Hungary
基金
瑞典研究理事会;
关键词
SINGLE DIRAC CONE; GRAPHENE; APPROXIMATION;
D O I
10.1038/s41535-024-00679-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.
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页数:8
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