Properties of phosphorous-doped large-grained microcrystalline silicon thin film and the application on HIT solar cell

被引：0

作者：

Shuai, Ziqiang ^{[1
]}

Hu, Qiubo ^{[2
]}

Zhao, Tongxin ^{[1
]}

Zheng, Bingbing ^{[1
]}

Song, Jianuo ^{[1
]}

Jiang, Yuchu ^{[1
]}

Zhao, Guanbo ^{[1
]}

Sun, Guangcai ^{[1
]}

Liu, Jia ^{[2
]}

Guo, Xuetong ^{[1
]}

机构：

[1] Luoyang Inst Sci & Technol, Dept Mat Sci & Engn, Luoyang 471023, Peoples R China

[2] Luoyang Inst Sci & Technol, Dept Math & Phys, Luoyang 471023, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2025年 / 705卷

基金：

美国国家科学基金会;

关键词：

Microcrystalline silicon; Phosphorous doping; PECVD; HIT solar cell; NANOCRYSTALLINE SILICON; GROWTH; TEMPERATURE; SINGLE; PECVD; LAYER;

D O I：

10.1016/j.physb.2025.417094

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Microcrystalline silicon (mu c-Si) thin films are prepared through plasma enhanced chemical vapor deposition (PECVD) route under the assist of negative bias. A substrate temperature as low as 150 degrees C is applied during deposition. Various characterizations have been carried out for investigating the structural, electrical and optical properties of the as-deposited thin films. At H-2 flow = 600 sccm, the largest mu c-Si grain size of similar to 300-600 nm is obtained. Furthermore, HIT solar cell devices have been prepared for verifying the effect of P-doped mu c-Si thin films as the n layer.

引用

页数：6

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