Total Ionizing Dose Responses of β-Ga2O3 Thin Film Solar-Blind Ultraviolet Photodetectors

被引：1

作者：

Xiao, Tao ^{[1
]}

Ma, Teng ^{[2
]}

Lei, Zhifeng ^{[2
]}

Fu, Weili ^{[1
]}

Zhang, Hong ^{[2
]}

Peng, Chao ^{[2
]}

Zhang, Zhangang ^{[2
]}

Song, Hongjia ^{[1
]}

Fu, Zhao ^{[1
]}

Guo, Daoyou ^{[3
]}

Zhong, Xiangli ^{[1
]}

Wang, Jinbin ^{[1
]}

Ouyang, Xiaoping ^{[1
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Natl Prov Lab Special Funct Thin Film Mat, Xiangtan 411105, Hunan, Peoples R China

[2] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Elect Compo, Guangzhou 511370, Peoples R China

[3] Zhejiang Sci Tech Univ, Dept Phys, Key Lab Opt Field Manipulat Zhejiang Prov, Hangzhou 310018, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Radiation effects; Photodetectors; Dark current; Photoconductivity; Reliability; Degradation; Physics; Performance evaluation; Lattices; Vibrations; Bias condition; optoelectrical characteristics; solar-blind ultraviolet photodetector; total ionizing dose (TID) effect; beta-Ga2O3; PERFORMANCE;

D O I：

10.1109/TED.2025.3534175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) beta-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-to-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the beta-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased beta-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.

引用

页码：1249 / 1253

页数：5

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