Exploring ferroelectric and ferromagnetism properties of KNbO3-Fe2O3-V2O5-B2O3 glass for energy storage applications

10KNbO3-10Fe2O3-30V2O5-50B2O3glass was created using the conventional melt-quench technique. The formation of as-quenched sample has been investigated via X-ray diffraction)XRD( as well as HR-TEM (referred to as high resolution-transmission electron microscopy). sample's conductivity as well as dielectric properties were evaluated as a function of (f) frequency (0.5-1000 kHz) and temperature (289 K-424 K). 3-ferroelectric phase transitions are detected above ambient temperature, as indicated by the epsilon'-T measurements. The as-quenched sample has a significant dielectric constant (epsilon' - 16000 at 0.5 kHz) obtained at third Tc - 398 K (Curie temperature), this is related to phase transition in structure. The dielectric features of relaxor ferroelectric are studied. The behavior of a semi-conductor has been shown by ac conductivity's temperature-dependent variation. CBH model, correlated barrier hopping analyzes the temperature-dependence of parameter s as well as the ac conductivity. Binding energy (Wm) was calculated. The as-quenched sample's current-voltage (I-V) graph was measured. For an as-quenched sample, a memristor's pinched hysteresis loop is illustrated. The P-E hysteresis loops confirm that as-quenched sample was ferroelectric material. The hysteresis loops were used to estimate energy storage efficiency and density. The magnetic properties for as-quenched sample were characterized via vibrating sample magnetometer, VSM. Based on these results, we could predict that the as-quenched sample will be useful for both developing energy storage and future non-volatile memristor device applications.