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Preparation of High-performance BaTiO3 Nanoparticles-embedded Porous Silicon Photodetectors by Electrochemical Etching and Laser Ablation in Liquid
被引:0
|作者:
Ismail, Raid A.
[1
]
Huseen, Sinai A.
[1
]
Abass, Taka D.
[1
]
Salim, Suaad S.
[1
]
Alwan, Alwan M.
[1
]
机构:
[1] Univ Technol Baghdad, Dept Appl Sci, Baghdad, Iraq
来源:
关键词:
Porous silicon;
Electrochemical etching;
BaTiO3;
nanoparticles;
Decoration;
Laser ablation in liquid;
Photodetector;
HETEROJUNCTION PHOTODETECTOR;
FABRICATION;
PHASE;
D O I:
10.1007/s12633-024-03194-3
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
In this work, BaTiO3 nanoparticles synthesized by laser ablation were embedded in p-type and n-type porous silicon (PSi), which were prepared using an electrochemical etching method. Structural analysis confirmed that the synthesized BaTiO3 nanoparticles are crystalline with a tetragonal structure. The direct optical energy gap of the BaTiO3 nanoparticles was found to be 3.75 eV at room temperature. Scanning electron microscopy revealed that the synthesized BaTiO3 nanoparticles have a spherical morphology with an average particle size of 34 nm. The optoelectronic properties of BaTiO3-embedded n-type and p-type porous silicon photodetectors were investigated, including dark and illuminated current-voltage characteristics, responsivity, external quantum efficiency, and specific detectivity. The responsivity of n-BaTiO3-embedded p-PSi and n-BaTiO3- embedded n-PSi was 0.44 and 0.12 A/W at 350 nm, respectively. Energy band diagrams under illumination conditions were constructed for n-BaTiO3-embedded p-PSi and n-BaTiO3- embedded n-PSi heterojunction photodetector.
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页码:205 / 218
页数:14
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