Transmission Electron Microscopy of InGaAs/GaAs Quantum Dots Grown in a Bi Vapor Flow

被引：0
作者：
Trunkin, I. N. [1 ]
Kazakov, I. P. [2 ]
机构：
[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
[2] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2024年 / 51卷 / 11期
关键词：
molecular beam epitaxy; InGaAs/GaAs heterostructures; laterally associated quantum dots; Bi surfactant; transmission electron microscopy; energy-dispersive X-ray spectroscopy;
D O I：
10.3103/S1068335624601067
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Transmission electron microscopy is used to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the influence of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. Mixed-dimensional nanostructures (0D/2D) are found. Energy-dispersive X-ray spectroscopy demonstrates that Bi acts as a surfactant and is not trapped by the growing layers.
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收藏
页码：482 / 486
页数：5
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