Transmission Electron Microscopy of InGaAs/GaAs Quantum Dots Grown in a Bi Vapor Flow

被引：0

作者：

Trunkin, I. N. ^{[1
]}

Kazakov, I. P. ^{[2
]}

机构：

[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

[2] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2024年 / 51卷 / 11期

关键词：

molecular beam epitaxy; InGaAs/GaAs heterostructures; laterally associated quantum dots; Bi surfactant; transmission electron microscopy; energy-dispersive X-ray spectroscopy;

D O I：

10.3103/S1068335624601067

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transmission electron microscopy is used to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the influence of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. Mixed-dimensional nanostructures (0D/2D) are found. Energy-dispersive X-ray spectroscopy demonstrates that Bi acts as a surfactant and is not trapped by the growing layers.

引用

页码：482 / 486

页数：5

共 8 条

[1] Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy [J].