Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias

被引:0
作者
Hu, Pei-Pei [1 ,2 ,3 ]
Xu, Li-Jun [1 ,3 ]
Zhang, Sheng-Xia [1 ,3 ]
Zhai, Peng-Fei [1 ,3 ]
Lv, Ling [2 ]
Yan, Xiao-Yu [1 ,3 ]
Li, Zong-Zhen [1 ,3 ]
Cao, Yan-Rong [2 ]
Zheng, Xue-Feng [2 ]
Zeng, Jian [1 ,2 ]
He, Yuan [1 ,3 ]
Liu, Jie [1 ,3 ]
机构
[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
[2] Xidian Univ, Key Lab Wide Band gap Semicond Mat, Minist Educ, Xian 710071, Peoples R China
[3] Univ Chinese Acad Sci UCAS, Beijing 100049, Peoples R China
关键词
GaN HEMTs; Heavy ions; Single-event burnout; Latent tracks; Degradation; SINGLE-EVENT BURNOUT; DISPLACEMENT DAMAGE; GAN FILMS; SEMICONDUCTORS; DEGRADATION; DEFECTS; DEVICES; LEAKAGE; TRACK;
D O I
10.1007/s41365-024-01567-2
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Gallium nitride (GaN)-based devices have significant potential for space applications. However, the mechanisms of radiation damage to the device, particularly from strong ionizing radiation, remains unknown. This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Under a high voltage, the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused "thermal burnout" of the devices. In addition, a burnout signature appeared on the surface of the burned devices, proving that a single-event burnout effect occurred. Additionally, degradation, including an increase in the on-resistance and a decrease in the breakdown voltage, was observed in devices irradiated with high-energy heavy ions and without bias. The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer. Moreover, a new type of N2 bubble defect was discovered inside the tracks using Fresnel analysis. The accumulation of N2 bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure. This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.
引用
收藏
页数:10
相关论文
共 36 条
[21]   An apparatus for in situ spectroscopy of radiation damage of polymers by bombardment with high-energy heavy ions [J].
Baake, Olaf ;
Seidl, Tim ;
Hossain, Umme Habiba ;
Delgado, Adriana O. ;
Bender, Markus ;
Severin, Daniel ;
Ensinger, Wolfgang .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2011, 82 (04)
[22]   Electric-field and thermally-activated failure mechanisms of AlGaN/GaN High Electron Mobility Transistors [J].
Zanoni, Enrico ;
Meneghesso, Gaudenzio ;
Meneghini, Matteo ;
Stocco, Antonio ;
Rampazzo, Fabiana ;
Silvestri, Riccardo ;
Rossetto, Isabella ;
Ronchi, Nicolo .
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08) :237-249
[23]   Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application [J].
Lei, Jianming ;
Wang, Rui ;
Yang, Guo ;
Wang, Jin ;
Chen, Dunjun ;
Lu, Hai ;
Zhang, Rong ;
Zheng, Youdou .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) :417-424
[24]   Hardening of ODS ferritic steels under irradiation with high-energy heavy ions [J].
Ding, Z. N. ;
Zhang, C. H. ;
Yang, Y. T. ;
Song, Y. ;
Kimura, A. ;
Jang, J. .
JOURNAL OF NUCLEAR MATERIALS, 2017, 493 :53-61
[25]   Vickers hardness change of the Chinese low-activation ferritic/martensitic steel CLF-1 irradiated with high-energy heavy ions [J].
丁兆楠 ;
张崇宏 ;
杨义涛 ;
陈宇光 ;
张宪龙 ;
宋银 ;
马通达 ;
徐玉平 ;
罗广南 .
Plasma Science and Technology, 2020, (05) :136-141
[26]   Vickers hardness change of the Chinese low-activation ferritic/martensitic steel CLF-1 irradiated with high-energy heavy ions [J].
Ding, Zhaonan ;
Zhang, Chonghong ;
Yang, Yitao ;
Chen, Yuguang ;
Zhang, Xianlong ;
Song, Yin ;
Ma, Tongda ;
Xu, Yuping ;
Luo, Guangnan .
PLASMA SCIENCE & TECHNOLOGY, 2020, 22 (05)
[27]   Ion tracks in amorphous SiO2 irradiated with low and high energy heavy ions [J].
Jensen, J ;
Razpet, A ;
Skupinski, M ;
Possnert, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 245 (01) :269-273
[28]   Luminescence Properties of ZrO2: Ti Ceramics Irradiated with Electrons and High-Energy Xe Ions [J].
Dauletbekova, Alma ;
Zvonarev, Sergey ;
Nikiforov, Sergey ;
Akilbekov, Abdirash ;
Shtang, Tatiana ;
Karavannova, Natalia ;
Akylbekova, Aiman ;
Ishchenko, Alexey ;
Akhmetova-Abdik, Gulzhanat ;
Baymukhanov, Zein ;
Aralbayeva, Gulnara ;
Baubekova, Guldar ;
Popov, Anatoli I. .
MATERIALS, 2024, 17 (06)
[29]   Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under different bias conditions [J].
Li, Shanjie ;
He, Zhiyuan ;
Gao, Rui ;
Chen, Yiqiang ;
Liu, Yang ;
Zhu, Zhe .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (48)
[30]   Induction of Micronuclei in Germinating Onion Seed Root Tip Cells Irradiated with High Energy Heavy Ions [J].
Takatsuji, Toshihiro ;
Takayanagi, Hiroki ;
Morishita, Kana ;
Nojima, Kumie ;
Furusawa, Yoshiya ;
Nakazawa, Yuka ;
Matsuse, Michiko ;
Akamatsu, Sakura ;
Hirano, Natsuko ;
Hirashima, Natsuko ;
Hotokezaka, Saori ;
Ijichi, Toyomi ;
Kakimoto, Chika ;
Kanemaru, Tomomi ;
Koshitake, Mayumi ;
Moriuchi, Akiko ;
Yamamoto, Kensuke ;
Yoshikawa, Isao .
JOURNAL OF RADIATION RESEARCH, 2010, 51 (03) :315-323