Enhanced piezoelectricity in CaBi2Nb2O9 high-temperature piezoelectric ceramics: low-temperature sintering and weak texturing

被引:0
作者
Wang, Z. P. [1 ,2 ]
Pan, C. B. [3 ,4 ]
Yin, L. H. [1 ]
Song, W. H. [1 ]
Zhu, X. B. [1 ]
Yang, J. [1 ]
Sun, Y. P. [1 ,5 ,6 ]
机构
[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] TianGong Univ, Key Lab Intelligent Control Elect Equipment, Tianjin 300387, Peoples R China
[4] Yongjiang Lab, Ningbo 315202, Peoples R China
[5] Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
[6] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
关键词
ELECTRICAL-PROPERTIES; STRUCTURAL DISTORTION; MICROSTRUCTURE; RESISTIVITY; PIEZOCERAMICS; CONDUCTIVITY; SUBSTITUTION; RELAXATION; IMPEDANCE; VACANCIES;
D O I
10.1007/s10854-024-14206-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of CeO2 sintering aid on the microstructural and electrical properties of CaBi2Nb2O9 ceramics was studied. The addition of CeO2 facilitates a reduction in the sintering temperature of CaBi2Nb2O9, improve the grain morphology, increase the relative density, and induce the c-axis oriented growth of some grains. The incorporation of some Ce ions into the B-sites of [NbO6] octahedra results in an increased tetragonal distortion, and therefore significantly affects the electrical properties of the ceramics. The sample with 0.6 wt% CeO2 exhibits an optimal performance with a large remanent polarization (Pr = 18.5 mu C/cm2) and a piezoelectric coefficient (d33 = 20.8 pC/N). The results indicate that adding CeO2 as a sintering aid is an effective strategy for enhancing the performance of CaBi2Nb2O9 ceramics.
引用
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页数:16
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