Single-photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot

被引：0
|
作者：
Veretennikov, A. I. [1 ]
Rakhlin, M. V. [1 ]
Serov, Yu. M. [1 ]
Galimov, A. I. [1 ]
Veyshtort, G. P. [1 ]
Sorokin, S. V. [1 ]
Klimko, G. V. [1 ]
Sedova, I. V. [1 ]
Maleev, N. A. [1 ]
Bobrov, M. A. [1 ]
Vasiliev, A. P. [1 ,2 ]
Kuzmenkov, A. G. [1 ]
Kulagina, M. M. [1 ]
Zadiranov, Yu. M. [1 ]
Troshkov, S. I. [1 ]
Salii, Yu. A. [1 ]
Berezina, D. S. [1 ]
Nikitina, E. V. [1 ,3 ]
Toropov, A. A. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Res & Engn Ctr, Submicron Heterostruct Microelect, St Petersburg 194021, Russia
[3] St Petersburg Acad Univ, Lab Nanoelect, St Petersburg 194021, Russia
来源：
JETP LETTERS | 2025年
关键词：
D O I：
10.1134/S0021364024605116
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C-band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% for a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C-band photon emission rate of similar to 1 MHz at the first lens with a second-order correlation function of g((2))(0) = 0.14.
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收藏
页码：170 / 174
页数：5
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