Modeling the Functioning of Semiconductor Devices Taking into Account Defects in the Atomic Structure

被引：0

作者：

Gainullin, I.K. ^{[1
]}

机构：

[1] Moscow State University, Moscow

来源：

Russian Microelectronics | 2024年 / 53卷 / 08期

关键词：

diffusion-drift model; electrophysical characteristics; numerical methods; transistor;

D O I：

10.1134/S1063739724700975

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

Abstract: This paper studies the testing of modern numerical methods for studying the electrophysical characteristics of semiconductor devices (SDs). Using the diffusion-drift model, the electrophysical characteristics of the selected transistor are calculated. An original program code is also developed for modeling ballistic electron transport in nanotransistors (topological dimensions of ~10 nm) taking into account defects in the atomic structure. Modeling the characteristics of a field-effect nanotransistor show that a violation of the crystal structure of the transistor leads to degradation of the I–V curve. © Pleiades Publishing, Ltd. 2024.

引用

页码：810 / 814

页数：4

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