Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure

被引：0

作者：

Lavanya, E. ^{[1
]}

Chandrasekar, L. Bruno ^{[2
]}

Karunakaran, M. ^{[3
]}

Dinesh, A. ^{[4
]}

Gnanasekaran, Lalitha ^{[5
]}

Santhamoorthy, Madhappan ^{[6
]}

Priyadharshini, E. ^{[7
]}

Guganathan, L. ^{[8
]}

机构：

[1] Heisenberg Res Consultancy, Dindigul, India

[2] Karpagam Acad Higher Educ, Coimbatore 641021, India

[3] Alagappa Govt Arts Coll, Dept Phys, Karaikkudi, India

[4] Anna Univ, K Ramakrishnan Coll Engn, Dept Chem, Trichy 621112, Tamil Nadu, India

[5] Univ Tarapaca, Inst Alta Invest, Arica 1000000, Chile

[6] Yeungnam Univ, Sch Chem Engn, Gyeongbuk 38541, South Korea

[7] Velammal Inst Technol, Dept Phys S & H, Chennai 601204, Tamil Nadu, India

[8] Saveetha Inst Med & Tech Sci SIMATS, Saveetha Sch Engn, Dept Phys, Chennai 602105, India

来源：

SEMICONDUCTORS | 2025年 / 59卷 / 03期

关键词：

heterostructure; Airy function; transmission; strain; zinc oxide; resonant tunneling; TRANSMISSION; ENERGY;

D O I：

10.1134/S1063782624602620

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnO/ZnCdO triangular double-barrier heterostructure is considered to examine the tunneling properties of electrons. The Airy function is used as the eigen function in the barrier region. The transfer matrix is formed by implementing boundary conditions and hence transmission coefficients are evaluated. The role of barrier width, Cd concentration and heterostructure strain on resonant tunneling are discussed. The increasing barrier width shifts the transparency peak to the higher energy level. The increasing Cd concentration has a huge role in deciding the tunneling properties of electrons in the heterostructure. The account of strain has great influence and the effect of strain is dominant at a high value of Cd concentration. The tunneling lifetime of electrons is also discussed.

引用

页码：211 / 216

页数：6

共 50 条

[41] Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions
Daqiq, Reza
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 74 : 255 - 260
[42] Theoretical study of resonant tunneling in symmetrical rectangular triple-barrier structures with deep wells
Yamamoto, H
Tsuji, K
Ikeda, Y
Taniguchi, K
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 421 - 428
[43] HIGH-CURRENT DENSITY IN AMORPHOUS-SILICON SILICONCARBIDE DOUBLE-BARRIER RESONANT-TUNNELING DEVICE ON ALUMINUM-SILICON SUBSTRATE
CHEN, KH
FANG, YK
LIU, CR
HWANG, JD
WU, KS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (6A): : L761 - L763
[44] All-Graphene Planar Double Barrier Resonant Tunneling Diodes
Al-Dirini, Feras
Hossain, Faruque M.
Nirmalathas, Ampalavanapillai
Skafidas, Efstratios
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (05): : 118 - 122
[45] CaF2/CdF2 double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio
Watanabe, M
Funayama, T
Teraji, T
Sakamaki, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (7B): : L716 - L719
[46] Transverse spatio-temporal instabilities in the double barrier resonant tunneling diode
Schöll, E
Amann, A
Rudolf, M
Unkelbach, J
PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) : 113 - 116
[47] Phonon-assisted resonant-magneto-tunneling in double barrier heterostructures
Bo, OL
Galperin, Y
PHYSICA SCRIPTA, 1997, T69 : 206 - 210
[48] Biased driven resonant tunneling through a double barrier graphene based structure
Biswas, R.
Mukhopadhyay, S.
Sinha, C.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (05) : 1781 - 1786
[49] Infinite dwell time and group delay in resonant electron tunneling through double complex potential barrier
Opacak, Nikola
Milanovic, Vitomir
Radovanovic, Jelena
SUPERLATTICES AND MICROSTRUCTURES, 2017, 112 : 415 - 421
[50] Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure
Shibayama, Shigehisa
Ishimoto, Shuto
Kato, Yoshiki
Sakashita, Mitsuo
Kurosawa, Masashi
Nakatsuka, Osamu
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2025, 13 : 79 - 85

← 1 2 3 4 5 →