Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification

被引：0

作者：

Watanabe, Tomoya ^{[1
]}

Takahashi, Hidemasa ^{[1
]}

Makisako, Ryutaro ^{[1
]}

Wakejima, Akio ^{[2
]}

Ando, Yuji ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect, Nagoya 4648601, Japan

[2] Kumamoto Univ, Res & Educ Inst Semicond & Informat, Kumamoto 8608555, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 03期

关键词：

Logic gates; HEMTs; Wide band gap semiconductors; Doping; Aluminum gallium nitride; Leakage currents; Gallium arsenide; Anodes; Gallium nitride; Electric breakdown; GaN; gated-anode diode (GAD); microwave rectification; wireless power transmission (WPT); SCHOTTKY-BARRIER DIODE; RECTIFIER; POWER; BAND; DC;

D O I：

10.1109/TED.2025.3530870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated a gated-anode diode employing an AlGaN/GaN high electron mobility transistor (HEMT) to serve as a rectification device in a 5.8-GHz band microwave wireless power transmission (WPT) system. To enhance the breakdown voltage and enable the devices to handle high power, a moderately doped contact layer was proposed and its impact on device performance was comprehensively investigated. We confirmed that medium doping facilitated depletion, achieving high breakdown voltage even with a short gate-to-contact spacing. However, an increase in contact resistance and a consequent decrease in forward current were observed as adverse effects. By optimizing the doping concentration, we successfully enhanced the breakdown voltage while suppressing the current drop, achieving a high-power density of 7.0 W/mm.

引用

页码：1008 / 1013

页数：6

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