Local Strain Engineering of Two-Dimensional Transition Metal Dichalcogenides Towards Quantum Emitters

被引:0
作者
Ai, Ruoqi [1 ]
Cui, Ximin [1 ]
Li, Yang [1 ]
Zhuo, Xiaolu [2 ]
机构
[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
[2] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
Two-dimensional transition metal dichalcogenides; Local strain; Excitonic behaviors; Quantum emitters; SINGLE-PHOTON EMITTERS; BAND-GAP; ROOM-TEMPERATURE; MONOLAYER MOS2; VALLEY POLARIZATION; PHASE-TRANSITION; WSE2; MONOLAYERS; 2D MATERIALS; LIGHT; SEMICONDUCTOR;
D O I
10.1007/s40820-024-01611-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional transition metal dichalcogenides (2D TMDCs) have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility, electonic structure, and optical properties. The strain-induced out-of-plane deformations in 2D TMDCs lead to diverse excitonic behaviors and versatile modulations in optical properties, paving the way for the development of advanced quantum technologies, flexible optoelectronic materials, and straintronic devices. Research on local strain engineering on 2D TMDCs has been delved into fabrication techniques, electronic state variations, and quantum optical applications. This review begins by summarizing the state-of-the-art methods for introducing local strain into 2D TMDCs, followed by an exploration of the impact of local strain engineering on optical properties. The intriguing phenomena resulting from local strain, such as exciton funnelling and anti-funnelling, are also discussed. We then shift the focus to the application of locally strained 2D TMDCs as quantum emitters, with various strategies outlined for modulating the properties of TMDC-based quantum emitters. Finally, we discuss the remaining questions in this field and provide an outlook on the future of local strain engineering on 2D TMDCs.
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页数:39
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