Enhancement of tunnel magnetoresistance in fully perpendicular MnGa-based magnetic tunnel junctions with metastable bcc CoMnFe interlayer

被引：0
|
作者：
Kumar, Deepak [1 ]
Kamata, Naoki [1 ,2 ]
Hyeokjin, Kwon [1 ,2 ]
Mizukami, Shigemi [1 ,3 ]
机构：
[1] Tohoku Univ, WPI Adv Inst Mat Res, Katahira 2-1-1, Sendai 9808577, Japan
[2] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai 9808579, Japan
[3] Tohoku Univ, Ctr Sci & Innovat Spintron, Katahira 2-1-1, Sendai 9808577, Japan
来源：
AIP ADVANCES | 2025年 / 15卷 / 03期
关键词：
ROOM-TEMPERATURE; ANISOTROPY; FILMS; RELAXATION; ENERGY; LAYER;
D O I：
10.1063/9.0000889
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO barrier and MnGa layers to enhance the TMR ratio. This study highlights the utility of bcc Co-based alloys, such as CoMnFe, which exhibit antiferromagnetic coupling with MnGa in p-MTJs. The TMR ratios of similar to 106% and 110% were observed corresponding to single and double interface p-MTJs, respectively, after annealing at 300 degrees C, demonstrating the potential of these materials for high-performance spin-transfer torque (STT) devices based on p-MTJs.
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页数：8
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