Enhancement of tunnel magnetoresistance in fully perpendicular MnGa-based magnetic tunnel junctions with metastable bcc CoMnFe interlayer

被引：0

作者：

Kumar, Deepak ^{[1
]}

Kamata, Naoki ^{[1
,2
]}

Hyeokjin, Kwon ^{[1
,2
]}

Mizukami, Shigemi ^{[1
,3
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Katahira 2-1-1, Sendai 9808577, Japan

[2] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai 9808579, Japan

[3] Tohoku Univ, Ctr Sci & Innovat Spintron, Katahira 2-1-1, Sendai 9808577, Japan

来源：

AIP ADVANCES | 2025年 / 15卷 / 03期

关键词：

ROOM-TEMPERATURE; ANISOTROPY; FILMS; RELAXATION; ENERGY; LAYER;

D O I：

10.1063/9.0000889

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO barrier and MnGa layers to enhance the TMR ratio. This study highlights the utility of bcc Co-based alloys, such as CoMnFe, which exhibit antiferromagnetic coupling with MnGa in p-MTJs. The TMR ratios of similar to 106% and 110% were observed corresponding to single and double interface p-MTJs, respectively, after annealing at 300 degrees C, demonstrating the potential of these materials for high-performance spin-transfer torque (STT) devices based on p-MTJs.

引用

页数：8

共 67 条

[11] High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications [J].

Huai, Yiming ;

Gan, Huadong ;

Wang, Zihui ;

Xu, Pengfa ;

Hao, Xiaojie ;

Yen, Bing K. ;

Malmhall, Roger ;

Pakala, Nirav ;

Wang, Cory ;

Zhang, Jing ;

Zhou, Yuchen ;

Jung, Dongha ;

Satoh, Kimihiro ;

Wang, Rongjun ;

Xue, Lin ;

Pakala, Mahendra .

APPLIED PHYSICS LETTERS, 2018, 112 (09)

[12] Large tunnel magnetoresistance in magnetic tunnel junctions with magnetic electrodes of metastable body-centered cubic CoMnFe alloys [J].

Ichinose, Tomohiro ;

Ikeda, Junichi ;

Onodera, Yuta ;

Tsuchiya, Tomoki ;

Suzuki, Kazuya Z. ;

Mizukami, Shigemi .

JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 960

[13]

Ikeda S, 2010, NAT MATER, V9, P721, DOI [10.1038/NMAT2804, 10.1038/nmat2804]

[14] Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature [J].

Ikeda, S. ;

Hayakawa, J. ;

Ashizawa, Y. ;

Lee, Y. M. ;

Miura, K. ;

Hasegawa, H. ;

Tsunoda, M. ;

Matsukura, F. ;

Ohno, H. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[15] Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy [J].

Jeong, Jaewoo ;

Ferrante, Yari ;

Faleev, Sergey V. ;

Samant, Mahesh G. ;

Felser, Claudia ;

Parkin, Stuart S. P. .

NATURE COMMUNICATIONS, 2016, 7

[16] Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films fabricated onto thermally oxidized silicon substrates [J].

Kubota, Takahide ;

Ito, Keita ;

Umetsu, Rie Y. ;

Takanashi, Koki .

APPLIED PHYSICS LETTERS, 2021, 118 (26)

[17] Structure and magnetism in metastable bcc Co1-xMnx epitaxial films [J].

Kunimatsu, Kazuma ;

Roy, Tufan ;

Okabayashi, Jun ;

Tsuchiya, Tomoki ;

Ichinose, Tomohiro ;

Tsujikawa, Masahito ;

Shirai, Masafumi ;

Mizukami, Shigemi .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2022, 548

[18] Magnetic tunnel junctions with metastable bcc Co3Mn electrodes [J].

Kunimatsu, Kazuma ;

Tsuchiya, Tomoki ;

Roy, Tufan ;

Elphick, Kelvin ;

Ichinose, Tomohiro ;

Tsujikawa, Masahito ;

Hirohata, Atsufumi ;

Shirai, Masafumi ;

Mizukami, Shigemi .

APPLIED PHYSICS EXPRESS, 2020, 13 (08)

[19] Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode [J].

Kunimatsu, Kazuma ;

Tsuchiya, Tomoki ;

Elphick, Kelvin ;

Ichinose, Tomohiro ;

Suzuki, Kazuya Z. ;

Hirohata, Atsufumi ;

Mizukami, Shigemi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (08)

[20] Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque [J].

Li, Weixiang ;

Liu, Zhaochun ;

Peng, Shouzhong ;

Lu, Jiaqi ;

Liu, Jiahao ;

Li, Xinyuan ;

Lu, Shiyang ;

Otani, Yoshichika ;

Zhao, Weisheng .

IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) :921-924

← 1 2 3 4 5 6 7 →