Enhancement of tunnel magnetoresistance in fully perpendicular MnGa-based magnetic tunnel junctions with metastable bcc CoMnFe interlayer

被引：0

作者：

Kumar, Deepak ^{[1
]}

Kamata, Naoki ^{[1
,2
]}

Hyeokjin, Kwon ^{[1
,2
]}

Mizukami, Shigemi ^{[1
,3
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Katahira 2-1-1, Sendai 9808577, Japan

[2] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai 9808579, Japan

[3] Tohoku Univ, Ctr Sci & Innovat Spintron, Katahira 2-1-1, Sendai 9808577, Japan

来源：

AIP ADVANCES | 2025年 / 15卷 / 03期

关键词：

ROOM-TEMPERATURE; ANISOTROPY; FILMS; RELAXATION; ENERGY; LAYER;

D O I：

10.1063/9.0000889

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO barrier and MnGa layers to enhance the TMR ratio. This study highlights the utility of bcc Co-based alloys, such as CoMnFe, which exhibit antiferromagnetic coupling with MnGa in p-MTJs. The TMR ratios of similar to 106% and 110% were observed corresponding to single and double interface p-MTJs, respectively, after annealing at 300 degrees C, demonstrating the potential of these materials for high-performance spin-transfer torque (STT) devices based on p-MTJs.

引用

页数：8

共 67 条

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