The Effect of Charge Carrier Concentration and Structural Defects on the Raman Spectra of GaAs Single Crystals Grown by the Czochralski Method

被引：0

作者：

Maksimov, A. D. ^{[1
]}

Tarasov, Yu. I. ^{[1
]}

Sanzharovskii, N. A. ^{[1
]}

Chusovskaya, K. A. ^{[1
]}

机构：

[1] Russian Technol Univ, MIREA, Moscow 119454, Russia

来源：

INORGANIC MATERIALS | 2024年 / 60卷 / 10期

关键词：

Raman spectroscopy; gallium arsenide; defects; plasmons; Raman scattering; PHONON; SCATTERING;

D O I：

10.1134/S0020168524701498

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman spectra of crystalline gallium arsenide grown by the Czochralski method have been studied. It has been demonstrated that the frequency of the coupled plasmon-phonon mode increases with increasing electron concentration n and approaches the frequency of the transverse vibration mode at n similar to 3 x 10(18) cm(-3). An increase in the hole concentration leads to a broadening of the longitudinal vibration peak. The relative intensity of the transverse mode decreases with an increase in the degree of disorder.

引用

页码：1161 / 1166

页数：6

共 15 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].