Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors

被引:0
作者
Asadov, S.M. [1 ,2 ,3 ]
Mustafaeva, S.N. [4 ]
Mammadov, A.N. [1 ,5 ]
Lukichev, V.F. [6 ]
机构
[1] Nagiyev Institute of Catalysis and Inorganic Chemistry, Ministry of Science and Education of Azerbaijan, Baku
[2] Scientific Research Institute “Geotechnological Problems of Oil, Gas, and Chemistry,” Ministry of Science and Education of Azerbaijan, Baku
[3] Azerbaijan State Oil and Industry University Ministry of Science and Education of Azerbaijan, Baku
[4] Institute of Physics, Ministry of Science and Education of Azerbaijan, Baku
[5] Azerbaijan Technical University, Ministry of Science and Education of Azerbaijan, Baku
[6] Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow
基金
俄罗斯基础研究基金会;
关键词
alternating current; conductivity; Cr doping; density functional theory; dielectric properties; electronic properties; multicomponent semiconductor; single crystals; TlIn[!sub]1–x[!/sub]Cr[!sub]x[!/sub]S[!sub]2[!/sub; transport phenomena; X-ray dosimetry;
D O I
10.1134/S106373972460081X
中图分类号
学科分类号
摘要
Abstract: Using density functional theory (DFT), the electronic structure, lattice parameters, magnetic and thermodynamic properties of TlIn1–xCrxS2 with a monoclinic system were calculated. The influence of the degree of doping with chromium impurities on the properties of TlIn1–xCrxS2 supercells has been studied. Calculations were carried out using ab initio methods in the local electron density approximation (LDA) and in the generalized gradient approximation (GGA). Spin-orbit and Coulomb interactions were taken into account in DFT calculations. A change in the concentration of chromium impurity (x = 0.001–0.02) in TlInS2 does not lead to a change in the equilibrium lattice parameters and the type of magnetic ordering in TlIn1–xCrxS2. Phase equilibria and stability of binary and ternary compounds were studied by the thermodynamic method and the functional DFT GGA method in the Tl–In–S ternary system. The constructed isothermal section of the phase diagram at 298 K confirms the insignificant region of homogeneity, based on intermediate ternary compounds, of the Tl–In–S system.The formation energies of the compounds TlInS2 and TlIn1–xCrxS2 (x = 0.001–0.02) were calculated by the DFT method and are thermodynamically consistent with each other. The energy of formation of the TlInS2 compound, calculated by theoretical methods, is also consistent with experimental data. This indicates the adequacy of the calculation models used. In order to determine stable doping conditions, we analyzed the thermodynamic properties of the phases of the Tl–In–S system, established stable states of multicomponent phases, stable equilibria between binary and ternary compounds of the TlIn1–xCrxS2 system. Polycrystals were synthesized and TlIn1–xCrxS2 single crystals with different chromium impurity concentrations (x = 0, 0.001 and 0.02) were grown from them. The crystal structure, thermodynamic, dielectric, electrical and dosimetric characteristics of TlIn1–xCrxS2 single crystals were studied. The calculated thermodynamic and physical properties of the TlIn1–xCrxS2 phases are compared with experimental data. © Pleiades Publishing, Ltd. 2024.
引用
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页码:519 / 542
页数:23
相关论文
共 44 条
[1]  
Mustafaeva S.N., Aliev V.A., Asadov M.M., Investigation of dc hopping conduction in TlGaS<sub>2</sub> and TlInS<sub>2</sub> single crystals, Phys. Solid State, 40, pp. 561-563, (1998)
[2]  
Mustafaeva S.N., Asadov M.M., Ismailov A.A., Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS<sub>2</sub> single crystal, Phys. Solid State, 51, pp. 2269-2273, (1996)
[3]  
Mustafaeva S.N., Asadov M.M., Effect of the chemical composition of TlIn<sub>1–x</sub>Er<sub>x</sub>S<sub>2</sub> (0 ≤ x ≤ 0.01) crystals on their dielectric characteristics and the parameters of localized states, Phys. Solid State, 61, pp. 1999-2004, (2019)
[4]  
Mustafaeva S.N., Asadov M.M., Huseynova S.S., Hasanov N.Z., Lukichev V.F., Ab initio calculations of electronic properties, frequency dispersion of dielectric coefficients and the edge of the optical absorption of TlInS<sub>2</sub>〈Sn〉 single crystals, Phys. Solid State, 64, pp. 617-627, (2022)
[5]  
Mustafaeva S.N., Asadov S.M., Guseinova S.S., Ab initio calculation of the structure and frequency dependences of dielectric properties of new semiconductors TlIn<sub>1–x</sub>Tm<sub>x</sub>S<sub>2</sub> (x = 0.001 and 0.005, Phys. Solid State, 66, pp. 524-531, (2024)
[6]  
Asadov S.M., Mustafaeva S.N., Huseinova S.S., Lukichev V.F., Simulation of electronic properties, enthalpy of formation, and dielectric characteristics of Yb-doped single crystal TlInS<sub>2</sub>, Russ. J. Phys. Chem. A, 98, pp. 1-8, (2024)
[7]  
Gasanly N.M., Low temperature absorptionedge and photoluminescence study in TlIn(Se 1− x S x) 2 layered mixed crystals, Phys, B: Condens. Matter, 530, pp. 82-85, (2018)
[8]  
El-Nahass M.M., Ali H.A.M., Abu-Samaha F.S.H., Optical characteristics of Tl<sub>0.995</sub>Cu<sub>0.005</sub>InS<sub>2</sub> single crystals, Phys. B: Condens. Matter (Amsterdam, Neth.), 415, pp. 57-61, (2013)
[9]  
Delice S., Gasanly N.M., Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements, Phys. B: Condens. Matter (Amsterdam, Neth.), 499, pp. 44-48, (2016)
[10]  
Seyidov M., Mikailzade F.A., Suleymanov R.A., Aliyeva V.B., Mammadov T.G., Sharifov G.M., Polarization switching in undoped and La-doped TlInS<sub>2</sub> ferroelectric-semiconductors, Phys. B: Condens. Matter (Amsterdam, Neth.), 526, pp. 45-53, (2017)