Although indium and related derivatives are essential to the semiconductor communication sector, they are rather hazardous to the environment. A thermal-acid modified palygorskite supported nano-zero-valent iron composite (HA-PAL/nZVI) suitable for In(III) adsorption was prepared by a simple and rapid liquid-phase reduction method, and HA-PAL/nZVI was characterized by XRD, FT-IR, BET and SEM-EDS. The experimental results show that the saturated adsorption capacity of HA-PAL/nZVI for In(III) can reach 301.76 mg<middle dot>g(-1) within 360 min under pH 3 and K 298.15. The adsorption process of In(III) conforms to the Langmuir isotherm model and the pseudo-second-order kinetic model, and Delta H = 10.04 kJ<middle dot>mol(-1), Delta S = 90.80 J<middle dot>mol(-1)<middle dot>K-1, Delta G < 0, which belongs to the rate-controlling step, spontaneous and endothermic chemical adsorption; In addition to Cu2+ and PO43-, cations (Na+, K+, Ca2+, Mg2+, Sn4+, Pb2+, Zn2+, Cd2+), anions (Cl-, SO42-, NO3-, CO3-), organic molecules (H2C2O4) and ionic strength showed significant tolerance to the adsorption of In(III) by HA-PAL/nZVI. Combined with XPS analysis results, it was determined that the HA-PAL/nZVI adsorption mechanism of In(III) was mainly based on redox, co-precipitation and physical adsorption.