Thermal excitation of carriers at tail states and recombination rate in hydrogenated amorphous silicon

被引：0
|
作者：
Ogihara, Chisato [1 ]
机构：
[1] Yamaguchi Univ, Dept Appl Sci, 2-16-1 Tokiwadai, Ube 7558611, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2025年 / 36卷 / 01期
关键词：
D O I：
10.1007/s10854-024-14062-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of low-energy photoluminescence (PL) in hydrogenated amorphous silicon (a-Si:H) have been performed by means of frequency-resolved spectroscopy. Temperature variation of radiative recombination rate of electron-hole pairs and thermal excitation of carriers at the tail states are discussed. The results suggest that the tail electrons do not contribute to the PL of the energy lower than 1.0 eV. Experimental results are quantitatively explained by considering a two-level system instead of the tail states.
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页数：6
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