The role of TCNQ for surface and interface passivation in inverted perovskite solar cells

被引:0
作者
Abicho, Samuel [1 ,2 ,3 ,6 ]
Hailegnaw, Bekele [4 ,5 ]
Mayr, Felix [3 ]
Cobet, Munise [3 ]
Yumusak, Cigdem [3 ]
Sergawi, Asefa [1 ]
Yohannes, Teketel [7 ]
Kaltenbrunner, Martin [4 ,5 ]
Scharber, Markus Clark [3 ]
Workneh, Getachew Adam [1 ,2 ]
机构
[1] Addis Ababa Sci & Technol Univ, Dept Ind Chem, POB 16417, Addis Ababa, Ethiopia
[2] Addis Ababa Sci & Technol Univ, Sustainable Energy Ctr Excellence, POB 16417, Addis Ababa, Ethiopia
[3] Johannes Kepler Univ Linz, Inst Phys Chem, Linz Inst Organ Solar Cells LIOS, Altenberger Str 69, A-4040 Linz, Austria
[4] Johannes Kepler Univ Linz, Div Soft Matter Phys, Altenberger Str 69, A-4040 Linz, Austria
[5] Johannes Kepler Univ Linz, LIT Soft Mat Lab, Altenberger Str 69, A-4040 Linz, Austria
[6] Hawassa Univ, Dept Chem, POB 05, Hawassa, Ethiopia
[7] Addis Ababa Univ, Dept Chem, POB 1176, Addis Ababa, Ethiopia
关键词
Organo-inorganic halide perovskite solar cells; Interface passivation; Recombination; Stability; Power conversion efficiency; DEFECT PASSIVATION; PERFORMANCE; FILM;
D O I
10.1007/s40243-024-00280-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The noticeable growth in the power conversion efficiency of solution-processed organo-inorganic halide perovskite solar cells (OIHPSCs) incited the photovoltaic community to look for limitations that hurdle the commercialization process. The surface and interface defects between the perovskite and electron transport layers are among the main challenges that cause significant non-radiative recombination losses, thereby they result in poor performance and stability. In this work, tetracyanoquinodimethane (TCNQ), a strong electron acceptor molecule, is applied at the interface between the photoactive perovskite and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) layers to modify the interface, and enhance device performance and stability. Steady-state and time-resolved photoluminescence measurements were used to characterize the role of the TCNQ passivation in reducing non-radiative recombination of charge carriers. Current density versus voltage (J-V) measurements show improvement in devices open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) for devices with TCNQ interface passivation, which is attributed to suppressed non-radiative recombination. In addition, a noticeable improvement in the device's stability was observed. This study reveals the dual role of TCNQ passivation in improving the photoelectric properties and stability of ambient air processed perovskite devices with the pin architecture.
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页数:11
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