Substrate-induced modulation of transient optical response of large-area monolayer MoS2

被引：2

作者：

Soni, Ashish ^{[1
,2
]}

Kamath, Nagendra S. ^{[1
,2
]}

Shen, Yun-Yang ^{[3
]}

Seksaria, Harshita ^{[4
]}

De Sarkar, Abir ^{[4
]}

Chang, Wen-Hao ^{[3
,5
]}

Pal, Suman Kalyan ^{[1
,2
]}

机构：

[1] Indian Inst Technol Mandi, Sch Phys Sci, Mandi 175005, Himachal Prades, India

[2] Indian Inst Technol Mandi, Adv Mat Res Ctr, Mandi 175005, Himachal Prades, India

[3] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[4] Inst Nano Sci & Technol, Knowledge City, Sect 81, Mohali 140306, India

[5] Acad Sinica, Res Ctr Appl Sci, 115 Nankang, Taipei, Taiwan

来源：

SCIENTIFIC REPORTS | 2025年 / 15卷 / 01期

关键词：

TMDs; Ultrafast transient absorption spectroscopy; Exciton-exciton annihilation; Carrier trapping; Substrate effect; Density functional theory; TRANSITION-METAL DICHALCOGENIDES; PHOTOLUMINESCENCE EMISSION; STRAINED MONOLAYER; ENERGY-CONVERSION; BAND-GAP; LAYER; RECOMBINATION; DYNAMICS; ANNIHILATION; EXCITONS;

D O I：

10.1038/s41598-025-92188-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The intrinsic properties of two-dimensional (2D) transition-metal dichalcogenides (TMDs) are profoundly influenced by their interface conditions. Engineering the TMD/substrate interface is crucial for harnessing the unique optoelectronic properties of 2D TMDs in device applications. This study delves into how the transient optical properties of monolayer (ML) MoS2 are affected by the substrate and film preparation processes, specifically focusing on the generation and recombination pathways of photoexcited carriers. Our experimental and theoretical analyses reveal that induced strain and defects during transfer process play pivotal roles in shaping these optical properties. Through femtosecond transient absorption measurements, we uncover the impact of substrate alterations on the carrier trapping process in ML MoS2. Moreover, we investigate exciton-exciton annihilation (EEA), demonstrating that the EEA rate varies with different substrates and significantly decreases at low temperatures (77 K). This research paves the way for customizing the optoelectronic properties of TMDs through strategic interface engineering, potentially leading to the creation of highly efficient electronic devices such as optoelectronic memory, light-emitting diodes, and photodetectors.

引用

页数：16

共 119 条

[1] Two-dimensional flexible nanoelectronics [J].

Akinwande, Deji ;

Petrone, Nicholas ;

Hone, James .

NATURE COMMUNICATIONS, 2014, 5

[2] Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors [J].

Amani, Matin ;

Chin, Matthew L. ;

Mazzoni, Alexander L. ;

Burke, Robert A. ;

Najmaei, Sina ;

Ajayan, Pulickel M. ;

Lou, Jun ;

Dubey, Madan .

APPLIED PHYSICS LETTERS, 2014, 104 (20)

[3] Interfacial Kinetics and Ionic Diffusivity of the Electrodeposited MoS2 Film [J].

Amin, Ruhul ;

Hossain, Md Mower ;

Zakaria, Yahya .

ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (16) :13509-13518

[4] Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3 [J].

Baniecki, John D. ;

Yamazaki, Takashi ;

Ricinschi, Dan ;

Van Overmeere, Quentin ;

Aso, Hiroyuki ;

Miyata, Yusuke ;

Yamada, Hiroaki ;

Fujimura, Norifumi ;

Maran, Ronald ;

Anazawa, Toshihisa ;

Valanoor, Nagarajan ;

Imanaka, Yoshihiko .

SCIENTIFIC REPORTS, 2017, 7

[5] Strain relaxation in monolayer MoS2 over flexible substrate [J].

Basu, Nilanjan ;

Kumar, Ravindra ;

Manikandan, D. ;

Dastidar, Madhura Ghosh ;

Hedge, Praveen ;

Nayak, Pramoda K. ;

Bhallamudi, Vidya Praveen .

RSC ADVANCES, 2023, 13 (24) :16241-16247

[6]

Baugher BWH, 2014, NAT NANOTECHNOL, V9, P262, DOI [10.1038/NNANO.2014.25, 10.1038/nnano.2014.25]

[7] Optical and Electronic Properties of Two-Dimensional Layered Materials [J].

Bernardi, Marco ;

Ataca, Can ;

Palummo, Maurizia ;

Grossman, Jeffrey C. .

NANOPHOTONICS, 2017, 6 (02) :479-493

[8] The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 [J].

Buscema, Michele ;

Steele, Gary A. ;

van der Zant, Herre S. J. ;

Castellanos-Gomez, Andres .

NANO RESEARCH, 2014, 7 (04) :561-571

[9] Local Strain Engineering in Atomically Thin MoS2 [J].

Castellanos-Gomez, Andres ;

Roldan, Rafael ;

Cappelluti, Emmanuele ;

Buscema, Michele ;

Guinea, Francisco ;

van der Zant, Herre S. J. ;

Steele, Gary A. .

NANO LETTERS, 2013, 13 (11) :5361-5366

[10] Substrate-induced strain and charge doping in CVD-grown monolayer MoS2 [J].

Chae, Woo Hyun ;

Cain, Jeffrey D. ;

Hanson, Eve D. ;

Murthy, Akshay A. ;

Dravid, Vinayak P. .

APPLIED PHYSICS LETTERS, 2017, 111 (14)

← 1 2 3 4 5 6 7 8 9 10 →