Understanding the impact of gadolinium substitution on the impedance and conduction mechanism of barium zirconium titanate ceramics

被引:1
作者
Bhargavi, G. Nag [1 ]
Badapanda, T. [2 ]
Anwar, M. Shahid [3 ]
Tlija, Mehdi [4 ]
Joardar, H. [5 ]
Tripathy, Satya N. [6 ]
机构
[1] Govt Pt Shyamacharan Shukla Coll Dharsiwa, Dept Phys, Raipur 493221, India
[2] CV Raman Global Univ, Dept Phys, Bhubaneswar 752054, India
[3] CSIR Inst Minerals & Mat Technol, Mat Chem Dept, Bhubaneswar 751013, India
[4] King Saud Univ, Coll Engn, Dept Ind Engn, POB 800, Riyadh 11421, Saudi Arabia
[5] CV Raman Global Univ, Dept Mech Engn, Bhubaneswar 752054, India
[6] Govt Autonomous Coll, Dept Phys, Angul 759143, Odisha, India
关键词
DIELECTRIC-PROPERTIES; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; PEROVSKITE; BEHAVIOR; TEMPERATURE; SPECTROSCOPY; RELAXATION; MODULUS; BATIO3;
D O I
10.1007/s10854-024-13741-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present paper, we investigate the structural and electrical properties of gadolinium (Gd)-modified barium zirconate titanate (BZT) ceramics, i.e., Ba1-xGd2x/3Zr0.05Ti0.95O3 (BGZT; x = 0.01-0.05). The high-temperature solid-state reaction method has been used to synthesize the ceramics. The X-ray diffraction and Rietveld refinement analysis show the existence of dual-phase tetragonal (P4mm) and orthogonal (Amm2) in all the compositions. In the XRD data, the peak shifts to a lower angle up to x = 0.03 and then toward the higher angle side indicating the doping at the A site for (x <= 0.03 and at the B site for higher concentration. The grain size is found to be reduced from around similar to 2 mu m to similar to 0.5 mu m with Gd doping. The real and imaginary impedance values increase to 0.8 M Omega for x = 0.03 and then reduce for higher concentrations. The complex impedance spectra indicate that the grain and the grain boundary resistance are decreasing with increasing concentrations of Gd until x = 0.03 with a minimum value of similar to 40k Omega (at 300 degrees C) and then rising for higher concentrations. The excellent fitting of the Kohlrausch-Williams-Watts function to the dielectric modulus indicates the transition from long-range to short-range mobility of charge carriers. The temperature-dependent ac conductivity shows that the conductivity rises until x = 0.03 and then reduces due to the incorporation of Gd in the Ti site producing oxygen vacancies. The activation energy for both the conduction and relaxation processes was obtained using the Arrhenius plots. The activation energy for the relaxation process is less than similar to 0.5 eV and for the conduction process found to be more than similar to 0.5 eV indicating different hoping mechanisms are involved in the composition.
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页数:28
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