Optimization of growth conditions for direct synthesis of SnSe2 thin films via improved atmospheric pressure chemical vapor deposition

被引：0

作者：

Wu, Baoqi ^{[1
,2
]}

Wang, Zhihao ^{[1
,2
]}

Wang, Zhanshou ^{[1
,2
]}

Yu, Jianyuan ^{[3
]}

Zhao, Hongli ^{[1
,2
]}

机构：

[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China

[2] Yanshan Univ, Coll Mat Sci & Engn, Qinhuangdao 066004, Peoples R China

[3] Tangshan Univ, Sch New Mat & Chem Engn, Tangshan 063000, Peoples R China

来源：

OPTICAL MATERIALS | 2025年 / 158卷

关键词：

Atmospheric pressure chemical vapor deposition; SnSe; 2; film; Growth optimization; Direct synthesis; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; THERMAL-PROPERTIES; MORPHOLOGY;

D O I：

10.1016/j.optmat.2024.116467

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, high-quality tin diselenide (SnSe2) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time, enabled the realization of films exhibiting exceptional crystallographic and optical properties. Notably, the growth temperature was found to significantly influence the SnSe2 film morphology. Under the optimal conditions (250 degrees C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation, 24.6 % transmittance, an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications. This study provides valuable insights for the large-scale production of high-performance SnSe2 thin films suitable for electronic and optoelectronic applications.

引用

页数：8

共 45 条

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