Comparative Study of Thermal Stability of Transparent Conducting ITO/Ag/ITO and IGZO/Ag/IGZO Three-Layer Structures

被引：0
作者：
A. Sh. Asvarov [1 ]
A. K. Akhmedov [2 ]
E. K. Murliev [1 ]
A. E. Muslimov [1 ]
V. M. Kanevsky [2 ]
机构：
[1] Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of Sciences, Makhachkala
[2] Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, Moscow
来源：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2024年 / 18卷 / Suppl 1期
关键词：
annealing; conductivity; magnetron sputtering; thermal stability; thin film; three-layer structure; transparency; transparent electrode; wide-bandgap oxide;
D O I：
10.1134/S1027451024701805
中图分类号：
学科分类号：
摘要：
Abstract: Transparent conducting three-layer oxide/silver/oxide structures, in which wide-bandgap semiconductor materials ITO and IGZO were used as oxide top and bottom layers, were obtained by the rf magnetron sputtering method. Comparative studies of the morphology, microstructure, optical transmittance, and surface resistance of the obtained three-layer structures were carried out. It was shown that the IGZO/Ag/IGZO structure is characterized by higher optical transmittance in the visible spectral range (Tav = 75.7%) and lower surface resistance (Rsurf = 3.8 Ohm/sq) compared to the ITO/Ag/ITO structure (Tav = 71.6% and Rsurf = 3.9 Ohm/sq, respectively). Subsequent testing the stability of the three-layer structures to various heating modes revealed that both structures exhibit tolerance to thermal annealing at T ≤ 250°C both under vacuum and in air. Annealing of the three-layer structures in air at higher temperatures showed that the IGZO/Ag/IGZO structure retains its integrity and functionality up to T = 350°C, whereas integrity of the ITO/Ag/ITO structure is large-scale compromised at this temperature. © Pleiades Publishing, Ltd. 2024.
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页码：S10 / S15
页数：5
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