Formation and properties of nickel silicides in the Ni/Mo/Ni/Si(100) thin-film system

被引:0
作者
Messai, Imad [1 ]
Bounab, El-oualid [1 ]
机构
[1] Res Ctr Ind Technol CRTI, POB 64, Algiers 16014, Algeria
关键词
THERMAL-STABILITY; INTERLAYER; PHASE; SI1-XGEX;
D O I
10.1007/s10854-025-14386-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicides are crucial for reducing contact resistance in microelectronics, and controlling their formation and stability remains a key challenge for improving device performance. This study investigates the structural and electrical properties of nickel silicides in the Ni/Mo/Ni/Si thin-film system, focusing on the role of a molybdenum (Mo) interlayer as a diffusion barrier. Samples were prepared via cathodic sputtering and characterized using X-ray diffraction, Raman spectroscopy, and four-point resistivity measurements. The results reveal that the Mo interlayer delays the formation of NiSi to 400 degrees C and limits its agglomeration, ensuring phase stability up to 600 degrees C. The complete transformation to NiSi2 occurs only at 800 degrees C, highlighting the interlayer's effectiveness in suppressing undesired phase transitions. Furthermore, the Mo interlayer reduces electrical resistivity by extending the stability of the low-resistivity NiSi phase. These findings offer valuable insights for optimizing silicide properties and thermal stability in microelectronic applications, paving the way for more efficient and reliable devices.
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页数:13
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共 80 条
  • [1] Influence of the annealing schemes on the formation and stability of Ni(Pt) Si thin films: Partial, laser, total, and one-step annealings
    Anak, Fabriziofranco Morris
    Campos, Andrea
    Gregoire, Magali
    Estellon, Adrien
    Lombard, Marc
    Guyot, Thomas
    Guillemin, Sophie
    Mangelinck, Dominique
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 184
  • [2] APPLICATIONS OF THIN-FILMS IN MICROELECTRONICS
    ANDERSON, JC
    [J]. THIN SOLID FILMS, 1972, 12 (01) : 1 - &
  • [3] Beyers R., 1985, J. Appl. Phys, V58, P4282
  • [4] Campos A., 2023, Mater. Sci. Semicond. Process, V162
  • [5] Cao P., 2021, Sol. Energy, V230, P1110
  • [6] Chang CS., 2010, Appl. Phys. Lett, V96, P052901
  • [7] Chen C., 2004, J. Appl. Phys, V96, P3987
  • [8] Chin CS., 2011, J. Mater. Sci, V50, P456
  • [9] Effects of hydrogen implantation on the structural and electrical properties of nickel silicide
    Choi, CJ
    Ok, YW
    Hullavarad, SS
    Seong, TY
    Lee, KM
    Lee, JH
    Park, YJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (09) : G517 - G521
  • [10] Choi S., 2016, J. Electron. Mater, V45, P891