The development of high-performance, nanoscale Dielectric Modulated Gate-All-Around Field Effect Transistor (FET) based biosensor has become a focal point of research in recent times, particularly for its potential applications in point-of-care diagnostics. Inspired by this evolving approach, a novel architecture, Dielectric Modulated 4 H-SiC Source Triple Matal Gate ALL Around Silicon Carbide FET (DM-TMGAA-SiCFET) biosensor has been introduced with a particular emphasis on its potential applications in label-free biosensing. The DM-TMGAA-SiCFET biosensor device comprises of 6 H-Silicon Carbide channel in Junctionless Accumulation Mode with Gate-All-Around and dual sided cavities. The primary emphasis of this work lies in the innovative structural design of the GAA Silicon Carbide FET biosensor. Specifically, it involves the integration of a distinct SiC polytype (4 H-SiC) for the source, employing a triple material gate, and the incorporation of an Al2O3 and HfO2 stack. These modifications are aimed at enhancing the overall performance and sensitivity of the biosensor device. A comparative analysis of the DM-TMGAA-SiCFET has been carried out with equivalent siliconFET biosensor. The findings highlight that the DM-TMGAA-SiCFET offers substantial improvements in sensitivity, with an impressive 140.72% and 36.72% enhancement in threshold voltage sensitivity observed for gelatin and DNA biomolecules, respectively. Furthermore, there is a remarkable 404.4% improvement in ION/IOFF sensitivity for gelatin biomolecules. Upon a comprehensive review of existing research, we conclude that the DM-TMGAA-SiCFET biosensor device significantly enhances biosensing capabilities and holds strong potential for applications in Point-of-Care Diagnostics and other biosensing scenarios.
