Back-side stress to ease p-MOSFET degradation on e-MRAM chips

被引：0

作者：

Yu, Zhi-Meng ^{[1
,2
,3
]}

Yang, Xiao-Lei ^{[3
]}

Zhao, Xiao-Nan ^{[3
]}

Li, Yan-Jie ^{[3
]}

He, Shi-Kun ^{[3
]}

Wang, Ye-Wu ^{[1
,2
]}

机构：

[1] Zhejiang Univ, Dept Phys, Zhejiang Prov Key Lab Quantum Technol & Device, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[3] Zhejiang Hikstor Technol Co Ltd, Hangzhou 311300, Peoples R China

来源：

CHINESE PHYSICS B | 2024年 / 33卷 / 12期

基金：

中国国家自然科学基金;

关键词：

back-side stress; metal-oxide-silicon field-effect transistor (MOSFET); magnetoresistive random access memory (MRAM); threshold voltage; RELIABILITY;

D O I：

10.1088/1674-1056/ad7c2d

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The magnetoresistive random access memory process makes a great contribution to threshold voltage deterioration of metal-oxide-silicon field-effect transistors, especially on p-type devices. Herein, a method was proposed to reduce the threshold voltage degradation by utilizing back-side stress. Through the deposition of tensile material on the back side, positive charges generated by silicon-hydrogen bond breakage were inhibited, resulting in a potential reduction in threshold voltage shift by up to 20%. In addition, it was found that the method could only relieve silicon-hydrogen bond breakage physically, thus failing to provide a complete cure. However, it holds significant potential for applications where additional thermal budget is undesired. Furthermore, it was also concluded that the method used in this work is irreversible, with its effect sustained to the chip package phase, and it ensures competitive reliability of the resulting magnetic tunnel junction devices.

引用

页数：5