Graphene Quantum Dots Based Ultrahigh Rate On-Chip Planar Micro-Supercapacitors with Winding Interdigitated Electrode Pattern

被引:0
作者
Sun, Rui [1 ]
Bian, Chun-De [1 ]
Xu, Yun-Wei [1 ]
Zhao, Li-Yan [1 ]
Ou, Jia-Hao [1 ]
Gao, Yu [1 ]
Jiao, Jun-Chao [1 ]
Qiao, Jia-Hui [1 ]
Zhang, Guang-Yu [1 ]
机构
[1] Harbin Univ Sci & Technol, Sch Sci, Harbin, Peoples R China
关键词
Planar micro-supercapacitors; graphene quantum dots; modified liquid-air interface self-assembly; photolithography; ENERGY DENSITY; DESIGN;
D O I
10.1080/10584587.2024.2327931
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the rapid development of intelligent electronic devices, and the demand for the shape of the electronic devices with different patterns, people have put forward higher requirements for the design and preparation of the corresponding energy storage devices. Graphene quantum dots are widely used due to their good properties. In this paper, graphene quantum dots were used as electrode materials for patterned planar micro-supercapacitors, and electrode film was prepared by a modified liquid-air interface self-assembly method with an electrode width/interdigital gap of 300 mu m/100 mu m. Then pattern design is conducted on this basis, and the patterned planar micro-energy storage device was prepared. The electrochemical properties of the devices were investigated at scan rates of 0.01-10000 Vs-1. At a scan rate of 0.01 Vs-1, the area capacitance and energy density were 12.52 mu Fcm-2 and 1.74 nWhcm-2, density was 44.36 mu Wcm-2.
引用
收藏
页码:942 / 952
页数:11
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