Analysis of Thermal Expansion Behavior and Interface Evolution of TSV Under Thermal Cycle Loading Based on Crystal Plastic Finite Element Method

被引：0

作者：

Hou, Kaihong ^{[1
,2
]}

Fan, Zhengwei ^{[1
,2
]}

Chen, Xun ^{[1
,2
]}

Zhang, Shufeng ^{[1
,2
]}

Wang, Yashun ^{[1
,2
]}

Jiang, Yu ^{[1
,2
]}

机构：

[1] Natl Univ Def Technol, Coll Intelligence Sci & Technol, Natl Key Lab Equipment State Sensing & Smart Suppo, Changsha 410073, Peoples R China

[2] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Technol Ele, Guangzhou 511370, Peoples R China

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2024年 / 24卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Through-silicon vias; Stress; Plastics; Microstructure; Copper; Thermal expansion; Strain; Reliability; Thermal loading; Failure analysis; Through-silicon via (TSV); crystal plasticity element method (CPFEM); thermal cycle loading; interface; MICROSTRUCTURE;

D O I：

10.1109/TDMR.2024.3478183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As a key vertical interconnection microstructure, Through-Silicon Via (TSV) plays an important role in three-dimension (3D) chips. The reliability issues of TSV are becoming more and more prominent in the increasingly harsh service environment, and the failure behavior of TSV under thermal cycle loading is the one to be solved urgently. In this study, the thermal expansion behavior and microstructure evolution along different paths and interfaces of TSV under thermal cycle loading are investigated base on Crystal Plasticity Element Method (CPFEM). Results reveal the evolution law of TSV grains and grain boundaries. The mechanical response along different path and interface of TSV is also clarified. Relevant results are expected to provide a certain reference for the failure analysis of TSV.

引用

页码：584 / 595

页数：12

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