Roles of shallow energy level defect states on amplified spontaneous emission enhancement of CH3NH3PbBr3 perovskite crystals

In this work, we demonstrated the role of shallow energy level defect states on the emission of CH3NH3PbBr3 perovskite polycrystals under laser excitation. The perovskite polycrystals were synthesized by a simple, one-step, low-cost solution self-assembled method. By adjusting the sample preparation temperature from 303 to 373 K, we could manipulate the number of shallow energy level defect states, which were evaluated through low-temperature photoluminescence measurement. This led to an evolution of the CH3NH3PbBr3 perovskite polycrystals' emission from amplified spontaneous emission to random lasing emission. As a result, the most efficient lasing threshold of 4 mu J mm(-2 )was achieved with the CH3NH3PbBr3 perovskite polycrystals synthesized at the optimum temperature of 333 K. Furthermore, the surface morphologies and the crystal structure of the CH3NH3PbBr3 perovskite polycrystals were also taken into consideration to unravel the role of defects in the CH3NH3PbBr3 perovskite polycrystals.