Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature

被引：0

作者：

Quesada, Emilio Perez-Bosch ^{[1
]}

Mistroni, Alberto ^{[1
]}

Jia, Ruolan ^{[2
]}

Reddy, Keerthi Dorai Swamy ^{[1
]}

Reichmann, Felix ^{[1
]}

Castan, Helena ^{[3
]}

Duenas, Salvador ^{[3
]}

Wenger, Christian ^{[1
,4
]}

Perez, Eduardo ^{[1
,4
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelekt, D-15230 Frankfurt, Oder, Germany

[2] Tech Univ Munich, Chair Micro & Nanosyst Technol, D-85748 Munich, Germany

[3] Univ Valladolid, Dept Elect, Valladolid 47011, Spain

[4] BTU Cottbus Senftenberg, Fac MINT Math Comp Sci Phys Elect Engn & Informat, D-03046 Cottbus, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 12期

关键词：

1T1R; CMOS; cryogenic temperatures; HfO2; resistive switching; RRAM; MEMORY;

D O I：

10.1109/LED.2024.3485873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4 K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4 K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.

引用

页码：2391 / 2394

页数：4

共 20 条

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