Large topological Hall effect in a chiral antiferromagnet in hopping transport regime

被引：0

作者：

Yi, Changjiang ^{[1
]}

Peshcherenko, Nikolai ^{[1
]}

Zhou, Yishui ^{[2
,3
]}

Samanta, Kartik ^{[4
]}

Yang, Qun ^{[1
,5
]}

Roychowdhury, Subhajit ^{[1
,6
]}

Yanda, Premakumar ^{[1
]}

Borrmann, Horst ^{[1
]}

Vergniory, Maia G. ^{[1
,7
]}

Zhang, Yang ^{[8
,9
]}

Su, Yixi ^{[2
]}

Shekhar, Chandra ^{[1
]}

Felser, Claudia ^{[1
]}

机构：

[1] Max Planck Institute for Chemical Physics of Solids, Dresden,01187, Germany

[2] Jülich Centre for Neutron Science (JCNS), Heinz Maier-Leibnitz-Zentrum (MLZ), Forschungszentrum Julich, Garching,85747, Germany

[3] Physics Department, Technical University Munich, Garching,85748, Germany

[4] Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln,NE,68588-0299, United States

[5] College of Letters and Science, University of California Los Angeles, Los Angeles,CA,90095, United States

[6] Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Bhopal,462066, India

[7] Donostia International Physics Center, Donostia-San Sebastián,20018, Spain

[8] Department of Physics and Astronomy, University of Tennessee, Knoxville,TN,37996, United States

[9] Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville,TN,37996, United States

来源：

Physical Review Research | / 6卷 / 04期

关键词：

D O I：

043295

中图分类号：

学科分类号：

摘要：

Antiferromagnetism - Carrier concentration - Hall effect - MOS devices - Semiconducting indium phosphide

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