Silicon integrated photonics

被引：1

作者：

Kosolobov, S. S. ^{[1
]}

Pshenichnyuk, I. A. ^{[1
]}

Taziev, K. R. ^{[1
]}

Zemtsova, A. K. ^{[1
]}

Zemtsov, D. S. ^{[1
]}

Smirnov, A. S. ^{[1
]}

Zhigunov, D. M. ^{[1
]}

Drachev, V. P. ^{[1
]}

机构：

[1] Skolkovo Inst Sci & Technol, Terr Skolkovo Innovat Ctr, Bolshoi Bulvar 30,Str 1, Moscow 121205, Russia

来源：

PHYSICS-USPEKHI | 2024年 / 67卷 / 11期

基金：

俄罗斯科学基金会;

关键词：

silicon; integrated photonics; nanophotonics; sili con-on-insulator; photonic integrated circuits; WAVE-GUIDES; MICRORING RESONATORS; HIGH-SPEED; SIDEWALL ROUGHNESS; HIGH-RESOLUTION; BAND; WAVELENGTH; BANDWIDTH; IMPROVEMENT; FABRICATION;

D O I：

10.3367/UFNe.2024.09.039762

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Technologies of silicon integrated photonics are the basis for the fabrication of a class of devices, such as optical modulators, photodetectors, optical filters and switches, multiplexers and demultiplexers, and optical transceivers. In many respects, silicon integrated photonics competes with alternative platforms based on indium phosphide, silicon nitride and dioxide, and other platforms. Here we provide an overview of modern approaches used in silicon integrated photonic technologies, describe the components of photonic integrated circuits and devices developed on their basis, and make a comparison with alternative technology platforms.

引用

收藏

页码：1153 / 1167

页数：15

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