Overview of Switching Transient Analytical Modeling of SiC MOSFET

被引：0

作者：

Wang, Lina ^{[1
]}

Yuan, Zezhuo ^{[1
]}

Chang, Junming ^{[1
]}

Wu, Zaiqia ^{[1
]}

机构：

[1] School of Automation Science and Electrical Engineering, Beihang University, Haidian District, Beijing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2024年 / 44卷 / 19期

基金：

中国国家自然科学基金;

关键词：

analytical modeling; parasitic capacitance; silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFET); switching transient; transconductance;

D O I：

10.13334/j.0258-8013.pcsee.230216

中图分类号：

学科分类号：

摘要：

In the field of evaluating and optimizing the switching transient characteristics of semiconductor devices, analytical models have been widely studied for their simplicity, intuitiveness, and ease of application. Compared with silicon-based power devices of the same power level, higher switching speeds of silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) lead to more complex switching transient characteristics, and the analytical modeling of their switching transient processes is more difficult. This paper summarizes the existing analytical transient models for SiC MOSFET and diode commutation pair. Various simplification assumptions are introduced successively in the modeling process, and the gradual simplification process of the analytical model is organized in an order that corresponds to the degree of simplification from low to high. By comparison, the advantages and disadvantages of each model as well as its applications are evaluated, and the piecewise linear model is introduced in detail. After that, the modeling methods of key parameters in switching transient modeling are summarized and evaluated. Finally, the existing problems in the switching transient analytical models of SiC MOSFET are pointed out, and suggestions for its future development are given. ©2024 Chin.Soc.for Elec.Eng.

引用

页码：7772 / 7783

页数：11

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