Visible to Near-Infrared Light Integrated Photonic Components on PECVD and LPCVD SiN Platform

被引:0
作者
Yang, Sen [1 ,2 ,3 ]
Ding, Zuoqin [4 ]
Li, Xiao [4 ]
Luo, Xiao [4 ]
Zhai, Shuhua [4 ]
Zheng, Xiujun [3 ]
Wang, Bo [2 ,5 ]
Li, He [2 ,5 ]
Deng, Zhuo [3 ]
Wang, Qianshi [4 ]
Kerman, Sarp [4 ]
Chen, Chang [1 ,2 ,3 ,5 ,6 ]
机构
[1] Shanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
[2] Shanghai Photon View, Shanghai 201900, Peoples R China
[3] Shanghai Ind Technol Res Inst SITRI, Shanghai 201800, Peoples R China
[4] Shanghai Photon View, Shanghai 201900, Peoples R China
[5] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
[6] Shanghai Jiao Tong Univ, Ruijin Hosp, Inst Med Chips, Sch Med, Shanghai 200025, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2024年 / 16卷 / 05期
关键词
Optical waveguides; Silicon compounds; Photonics; Refractive index; Semiconductor device measurement; Propagation losses; Silicon; Photonic integration; silicon nitride (SiN); process design kits (PDKs); visible to near-infrared (VIS-NIR); SILICON-NITRIDE; GRATING COUPLER; TECHNOLOGY; ABSORPTION; SCATTERING; CIRCUITS; DEVICES;
D O I
10.1109/JPHOT.2024.3467310
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present our process design kits (PDKs) component performances for different wavelengths in the visible to near-infrared (VIS-NIR) range on Shanghai Industrial mu Technology Research Institute's (SITRI's) 200 mm silicon nitride (SiN) photonics platform. SiN waveguide platform has emerged as a promising technology due to its low optical loss, relatively high refractive index, and transparency across the VIS-NIR spectrum. The industrialization of SiN platforms requires matured PDKs. On SITRI's 200 mm SiN photonics platform, we developed PDKs using both Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Low-Pressure Chemical Vapor Deposition (LPCVD) processes, with SiN layers of 180 nm and 150 nm thicknesses, respectively. The fabricated waveguides exhibit low propagation loss, ranging from 2.5 dB/cm to 0.34 dB/cm from 532 nm to 860 nm. Additionally, we present a low bending loss which is less than 0.06 dB/90 degrees with a radius of 100 mu m. Furthermore, the loss of the linear grating coupler (LGC) is less than 2.6 dB at 785 nm. We have also achieved low-loss splitters, including 1 x 2 multimode interference (MMI) coupler, and directional coupler (DC), with a minimum excess loss of 0.03 dB. Additionally, micro ring resonator with high quality (Q) factors of 146,000 has been demonstrated. Our work on developing these PDKs will open new opportunities for researchers and developers to design and fabricate advanced photonic devices on the SiN platform in SITRI's 200 mm fabrication line.
引用
收藏
页数:7
相关论文
共 40 条
  • [1] Advances and applications of nanophotonic biosensors
    Altug, Hatice
    Oh, Sang-Hyun
    Maier, Stefan A.
    Homola, Jiri
    [J]. NATURE NANOTECHNOLOGY, 2022, 17 (01) : 5 - 16
  • [2] Low-loss optical waveguides for the near ultra-violet and visible spectral regions with Al2O3 thin films from atomic layer deposition
    Aslan, Mustafa M.
    Webster, Nathan A.
    Byard, Courtney L.
    Pereira, Marcelo B.
    Hayes, Colin M.
    Wiederkehr, Rodrigo S.
    Mendes, Sergio B.
    [J]. THIN SOLID FILMS, 2010, 518 (17) : 4935 - 4940
  • [3] Silicon nitride stoichiometry tuning for visible photonic integrated components
    Blasco, M.
    Dacunha, S.
    Dominguez, C.
    Faneca, J.
    [J]. APPLIED PHYSICS LETTERS, 2024, 124 (22)
  • [4] Silicon Nitride Building Blocks in the Visible Range of the Spectrum
    Blasco-Solvas, Marcal
    Fernandez-Vior, Berta
    Sabek, Jad
    Fernandez-Gavela, Adrian
    Dominguez-Bucio, Thalia
    Gardes, Frederic Y.
    Dominguez-Horna, Carlos
    Faneca, Joaquin
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2024, 42 (17) : 6019 - 6027
  • [5] Heterogeneously Integrated Silicon Photonics for the Mid-Infrared and Spectroscopic Sensing
    Chen, Yu
    Lin, Hongtao
    Hu, Juejun
    Li, Mo
    [J]. ACS NANO, 2014, 8 (07) : 6955 - 6961
  • [6] Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum
    Corato-Zanarella, Mateus
    Ji, Xingchen
    Mohanty, Aseema
    Lipson, Michal
    [J]. OPTICS EXPRESS, 2024, 32 (04) : 5718 - 5728
  • [7] Silicon oxynitride planar waveguiding structures for application in optical communication
    de Ridder, RM
    Wörhoff, K
    Driessen, A
    Lambeck, PV
    Albers, H
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (06) : 930 - 937
  • [8] Diekmann R, 2017, NAT PHOTONICS, V11, P322, DOI [10.1038/NPHOTON.2017.55, 10.1038/nphoton.2017.55]
  • [9] A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits
    Gardes, Frederic
    Shooa, Afrooz
    De Paoli, Greta
    Skandalos, Ilias
    Ilie, Stefan
    Rutirawut, Teerapat
    Talataisong, Wanvisa
    Faneca, Joaquin
    Vitali, Valerio
    Hou, Yaonan
    Bucio, Thalia Dominguez
    Zeimpekis, Ioannis
    Lacava, Cosimo
    Petropoulos, Periklis
    [J]. SENSORS, 2022, 22 (11)
  • [10] Geuzebroek Douwe, 2017, 2017 IEEE 14th International Conference on Group IV Photonics (GFP), P83, DOI 10.1109/GROUP4.2017.8082207