Enhanced carrier transport of monolayer MoSe2 through interlayer coupling with in situ grown metal-organic frameworks

被引：0
|
作者：
Wang, Shan [1 ,2 ,3 ,6 ]
Zhang, Qing [1 ,2 ,3 ,5 ,6 ]
Fan, Aiqing [1 ,2 ,3 ,6 ]
Li, Lin [4 ,6 ]
Geng, Dechao [1 ,2 ,3 ,6 ,7 ]
机构：
[1] Tianjin Univ, Key Lab Organ Integrated Circuit, Minist Educ, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
[3] Collaborat Innovat Ctr Chem Sci & Engn, Tianjin 300072, Peoples R China
[4] Tianjin Normal Univ, Coll Chem, Tianjin 300387, Peoples R China
[5] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
[6] Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[7] Haihe Lab Sustainable Chem Transformat, Tianjin 300192, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 2024年 / 60卷 / 84期
基金：
中国博士后科学基金; 国家重点研发计划;
关键词：
D O I：
10.1039/d4cc03869j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Exceptional interlayer coupling of organic-inorganic vdWHs is paramount for enhancing electron mobility. Herein, we report a novel transfer-free method to fabricate MoSe2/Ni-3(HITP)(2) vdWHs. The MOF film promotes interfacial charge transfer, leading to a threefold increase in electron mobility. This work provides a platform for developing high-performance optoelectronic devices.
引用
收藏
页码：12201 / 12204
页数：4
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