Study on the time-resolved detection performance of β-Ga2O3-based SBUV photodetectors: surface chemical analysis and the impacts of non-VO factors

被引：1
|
作者：
Li, Zeming [1 ,3 ]
Shen, Rensheng [1 ]
Li, Wancheng [2 ]
Jiao, Teng [2 ]
Chang, Yuchun [1 ]
Liang, Hongwei [1 ]
Xia, Xiaochuan [1 ]
Zhang, Baolin [2 ]
机构：
[1] Dalian Univ Technol, Sch Integrated Circuits, Dalian 116024, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[3] Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Guangdong, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2024年 / 13卷 / 01期
基金：
中国国家自然科学基金;
关键词：
CARRIER RECOMBINATION; DISLOCATIONS; MECHANISM; STATES; TRAP; ZNO;
D O I：
10.1039/d4tc03701d
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The time-resolved detection performance of beta-gallium oxide (beta-Ga2O3)-based solar-blind ultraviolet (SBUV) photodetectors (PDs) are garnering extensive research attention. Generally, variations in the response and recovery rates of beta-Ga2O3-based PDs have been attributed to oxygen vacancies (V-O), typically analyzed through X-ray photoelectron spectroscopy (XPS) O 1s spectra. However, in this study, we fabricated SBUV PDs with beta-Ga2O3 films grown via metal-organic chemical vapor deposition (MOCVD). The surface chemical analysis of the obtained films reveals that the XPS O 1s spectra are unaffected by V-O. Additionally, by correlating film properties with PD performance, we demonstrate the significant role of non-V-O factors in shaping the time-resolved detection performance of these devices.
引用
收藏
页码：491 / 499
页数：9
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