Effect of high-temperature annealing on the internal friction and optical transmittance of single crystal gallium oxide

被引:0
作者
Kaminskii, Vladimir V. [1 ]
Yu Panov, Dmitrii Yu [1 ]
Spiridonov, Vladislav A. [1 ]
Bauman, Dmitrii A. [1 ]
Kalganov, Dmitrii A. [2 ]
Shcheglov, Mikhail P. [2 ]
Romanov, Alexey E. [1 ]
机构
[1] ITMO University, St. Petersburg
[2] Ioffe Institute, St. Petersburg
来源
Materials Physics and Mechanics | 2024年 / 52卷 / 05期
基金
俄罗斯科学基金会;
关键词
gallium oxide; internal friction; optical transmittance; single crystal; vacancies; Young’s modulus;
D O I
10.18149/MPM.5252024_5
中图分类号
学科分类号
摘要
The effect of high-temperature annealing on the structure and properties of single crystal β-phase gallium oxide is reported in this work. The investigated sample obtained by cleaving from a bulk β-Ga2O3 ingot grown by the edge-defined film-fed growth method. Some of the samples were annealed in an oxygen-containing atmosphere at temperatures up to T = 1673 K. The temperature dependences of internal friction and dynamic modulus of elasticity were obtained by the composite oscillator method at a frequency of 100 kHz. Optical absorption spectra were investigated in the wavelength range from 200 nm to 2 µm. It was found that annealing and redistribution of gallium vacancies in beta-phase gallium oxide crystals is accompanied by simultaneous changes in the internal friction in the temperature region around 290 K and in the optical spectrum in the infrared region. © V.V. Kaminskii, D.Yu. Panov, V.A. Spiridonov, D.A. Bauman, D.A. Kalganov, M.P. Scheglov, A.E. Romanov, 2024.
引用
收藏
页码:48 / 54
页数:6
相关论文
共 30 条
[1]  
Rozhkov MA, Kolodeznyi ES, Smirnov AM, Bougrov VE, Romanov AE., Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors, Materials Physics and Mechanics, 24, 2, pp. 194-200, (2015)
[2]  
Kaur D, Kumar M., A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects, Advanced Optical Materials, 9, 9, (2021)
[3]  
Li Z, Tang H, Li Y, Gu M, Xu J, Chen L, Liu J, Ouyang X, Liu B., Enhanced scintillation performance of β-Ga2O3 single crystals by Al3+ doping and its physical mechanism, Applied Physics Letters, 121, 10, (2022)
[4]  
Bauman DA, Panov DI, Spiridonov VA, Kremleva AV, Romanov AE., On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method, Functional Materials Letters, 16, 7, (2023)
[5]  
Galazka Z, Ganschow S, Seyidov P., Irmscher K, Pietsch M, Chou TS, Anooz SB, Grueneberg R, Popp A, Dittmar A, Kwasniewski A, Suendermann M, Klimm D, Straubinger T, Schroeder T, Bickermann M., Two inch diameter, highly conductingbulkβ-Ga2O3singlecrystalsgrownbytheCzochralskimethod, AppliedPhysicsLetters, 120, 15, (2022)
[6]  
Nikolaev VI, Polyakov AY, Stepanov SI, Pechnikov AI, Guzilova LI, Scheglov MP, Chikiryaka AV., Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire, Materials Physics and Mechanics, 51, 1, pp. 1-9, (2023)
[7]  
Butenko PN, Panov DI, Kremleva AV, Zakgeim DA, Nashchekin AV, Smirnova IG, Bauman DA, Romanov AE, Bougrov VE., Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content, Materials Physics and Mechanics, 42, 6, pp. 802-807, (2019)
[8]  
Van Bardeleben HJ, Zhou S, Gerstmann U, Skachkov D, Lambrecht WR, Ho QD, Deak P., Proton irradiation induced defects in β-Ga2O3: A combined EPR and theory study, APL Materials, 7, 2, (2019)
[9]  
Wang Z, Chen X, Ren FF, Gu S, Ye J., Deep-level defects in gallium oxide, Journal of Physics D: Applied Physics, 54, 4, (2020)
[10]  
Varley JB, Weber JR, Janotti A, Van de Walle CG., Oxygen vacancies and donor impurities in β-Ga2O3, Applied Physics Letters, 97, 14, (2010)