Monte Carlo analysis of electron transport in GaInAsSb material

This work presents the results of the ensemble Monte Carlo simulation of electron transport in GaInAsSb material with a stoichiometric coefficient of 0.5. The study focuses on the electrons' behaviour across the three lowest valleys of the conduction band Gamma, L, and X considered isotropic and non-parabolic. The main goal is to track the electron trajectories under varying electric fields and temperatures. The dominant scattering mechanisms considered include acoustic and polar optical phonon, as well as inter-valley and intra-valley interactions. The results indicate that both temperature and electric field significantly influence the electronic drift velocity in stationary and transient regimes.