Suppression of parasitic lasing in erbium doped thin film lithium niobate waveguide amplifier by integrated wavelength division multiplexer

被引：0

作者：

Han, Jinli ^{[1
,4
]}

Li, Mengqi ^{[2
,4
]}

Dong, Qiaonan ^{[3
]}

Wu, Rongbo ^{[2
,4
]}

Wang, Zhe ^{[2
,4
]}

Liu, Zhaoxiang ^{[2
,4
]}

Sun, Saisai ^{[3
]}

Fang, Zhiwei ^{[2
,4
]}

Wang, Min ^{[2
,4
]}

Zhang, Haisu ^{[2
,4
]}

Cheng, Ya ^{[1
,2
,3
,4
,5
,6
,7
,8
]}

机构：

[1] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China

[2] East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromechan Lab XXL, Shanghai 200241, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China

[5] Hefei Natl Lab, Hefei 230088, Peoples R China

[6] Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China

[7] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China

[8] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China

来源：

APL PHOTONICS | 2024年 / 9卷 / 12期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

OPTICAL-DEVICES; LASER; GAIN;

D O I：

10.1063/5.0232333

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photonic integrated circuits based erbium doped amplifiers have attracted great interest due to their compact footprint, high gain in the telecom C-band, and high scalability for functional integration. In this work, a wavelength division multiplexer integrated erbium doped waveguide amplifier fabricated on the thin film lithium niobate on insulator platform is demonstrated. An on-chip saturated power of 10 dBm with the net gain around 10 dB is achieved from the monolithically integrated amplifier chip with the footprint of only 3 x 5 mm(2). In particular, the suppression of parasitic lasing in the waveguide amplifier is realized thanks to the spectral response of the integrated wavelength division multiplexer. Theoretical analysis of parasitic lasing on amplifier performance is also conducted. The demonstrated integrated erbium doped waveguide amplifier will find great use in various applications based on the thin film lithium niobate on an insulator platform.

引用

页数：8

共 36 条

[1] An Erbium-Doped Waveguide Amplifier on Thin Film Lithium Niobate with an Output Power Exceeding 100 mW [J].