Transverse size effect of relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/ 3 Nb 2/3 )O 3-PbTiO 3 film for one- and two-dimensional integrated sensors by simulation

被引:1
作者
Liang, Cao [1 ]
Gong, Zhentao [2 ]
Wang, Simin [3 ]
Wei, Mianhao [4 ]
Zhang, Qiaozhen [5 ]
Duan, Zhihua [1 ]
Wang, Tao [1 ]
Tang, Yanxue [1 ]
Zhao, Xiangyong [1 ]
Wang, Feifei [1 ]
机构
[1] Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
[2] Baoshan World Foreign Language High Sch, Shanghai 201906, Peoples R China
[3] Shuyang High Sch Jiangsu Prov, Jiangsu 223600, Peoples R China
[4] Shanghai Normal Univ Baoshan, High Sch, Shanghai 200444, Peoples R China
[5] Shanghai Normal Univ, Coll Informat Mech & Elect Engn, Shanghai 200234, Peoples R China
基金
中国国家自然科学基金;
关键词
PIMNT; Thin film; Transverse size effect; Finite element analysis;
D O I
10.1016/j.ceramint.2024.08.466
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, the transverse size effect of the new-generation relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PIMNT) thin film was studied by finite element method, aiming to revealing the lateral size and shape dependence of the piezoelectric, dielectric, and pyroelectric behavior for guiding one- and two-dimensional integrated array sensor applications. The results indicated that as the aspect ratio (width to thickness ratio) decreased from 100 to 0.01, for both one-dimensional rectangular and two-dimensional square PIMNT array elements, a sharp increase in piezoelectric and dielectric constants could be observed for the PIMNT with <001> direction while a slight increase could be found for those along <111> orientation, exhibiting a strong orientation dependence. In comparison, the PIMNT with <110> direction exhibited strong shape dependence. The piezoelectric and dielectric constants of <110>-oriented square element increased more remarkably than those of the rectangular one. The pyroelectric coefficients of PIMNT exhibited weak shape dependence, decreasing from 8.5 x 10(-4) C/(m(2)<middle dot>K) to about 8.0 x 10(-4) C/(m(2)<middle dot>K) for both element shapes with transverse size decreasing. These findings give insight into the transverse size and shape effect on the new-generation PIMNT thin film and provide a guide for its design in one- and two-dimensional piezoelectric and pyroelectric array sensor applications.
引用
收藏
页码:46246 / 46251
页数:6
相关论文
共 32 条
[1]   Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size [J].
Bühlmann, S ;
Dwir, B ;
Baborowski, J ;
Muralt, P .
APPLIED PHYSICS LETTERS, 2002, 80 (17) :3195-3197
[2]  
Cao L., Appl. Phys. Lett., V122, P2023
[3]   Novel pyroelectric single crystals PIN-PMN-PT and their applications for NDIR gas detectors [J].
Chen, Jianwei ;
Zhu, Lili ;
Zhang, Mengyuan ;
Feng, Peigui ;
Sun, Ruiyu ;
Di, Wenning ;
Lin, Di ;
Jiao, Jie ;
Luo, Haosu .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (01)
[4]   Design of super-elastic freestanding ferroelectric thin films guided by phase-field simulations [J].
Guo, Changqing ;
Huang, Houbing .
MICROSTRUCTURES, 2022, 2 (04)
[5]   Composition and orientation dependence of high electric-field-induced strain in Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals [J].
He, Chongjun ;
Chen, Hongbing ;
Bai, Fei ;
Fan, Zhibin ;
Sun, Liang ;
Xu, Feng ;
Wang, Jiming ;
Liu, Youwen ;
Zhu, Kongjun .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (12)
[6]   Full Tensorial Elastic, Piezoelectric, and Dielectric Properties Characterization of [011]-Poled PZN-9% PT Single Crystal [J].
He, Chongjun ;
Jing, Weiping ;
Wang, Feifei ;
Zhu, Kongjun ;
Qiu, Jinhao .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2011, 58 (06) :1127-1130
[7]   Advantages of PZT thick film for MEMS sensors [J].
Hindrichsen, C. G. ;
Lou-Moller, R. ;
Hansen, K. ;
Thomsen, E. V. .
SENSORS AND ACTUATORS A-PHYSICAL, 2010, 163 (01) :9-14
[8]  
Jaffe B., 1971, Piezoelectric Ceramics
[9]   Epitaxial ferroelectric 0.3Pb(In1/2Nb1/2)O3-0.38Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 thin films grown on (110)-oriented MgO substrates [J].
Ji, Wei ;
Yao, Kui ;
Al-Mamun, Abdullah ;
Bhatia, Charanjit S. .
THIN SOLID FILMS, 2015, 597 :193-196
[10]   Application study of Mn-doped PIN-PMN-PT relaxor ferroelectric crystal grown by Vertical Gradient Freeze method [J].
Jiang, Zibo ;
Ye, Zuo-Guang .
FERROELECTRICS, 2020, 557 (01) :9-17