Dielectric nonlinearity analysis of BNT-ST-BT relaxor ferroelectric thin films with different film thicknesses

被引：0

作者：

Zhao, Jinyan ^{[1
]}

Wang, Zhe ^{[2
]}

Li, Yizhuo ^{[1
]}

Zheng, Kun ^{[3
]}

Zhang, Jie ^{[1
]}

Meng, Haoyan ^{[1
]}

Zhang, Nan ^{[1
]}

Zhao, Yulong ^{[4
,5
]}

Niu, Gang ^{[1
,5
]}

Ren, Wei ^{[1
,5
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Elect Mat Res Lab, Key Lab Minist Educ,State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China

[2] Liaocheng Univ, Sch Mat Sci & Engn, Shandong Dept Educ, Lab Sensit Mat & Devices, Liaocheng 252059, Peoples R China

[3] Xi An Jiao Tong Univ, Sch Instrument Sci & Technol, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China

[4] Xi An Jiao Tong Univ, Sch Mech Engn, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China

[5] Xi An Jiao Tong Univ, Int Joint Lab Micro Nano Mfg & Measurement Technol, Xian 710049, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2024年 / 136卷 / 22期

关键词：

ENERGY-STORAGE PERFORMANCE; PIEZOELECTRIC PROPERTIES; DEPENDENCE;

D O I：

10.1063/5.0231329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thickness-dependent dielectric nonlinear properties of 0.78Bi(0.5)Na(0.5)TiO(3)-0.2SrTiO(3)-0.02BaTiO(3) thin films in a thickness range of 0.62-1.62 mu m were investigated in this work. It was demonstrated that the dielectric properties decreased with the decrease in thickness due to the substrate clamping inducing the degeneration of intrinsic contribution and the reduced domain wall mobility. A low DC electric field promoted domain switching and reversible domain wall motion. The domain mobility was suppressed by a high DC electric field, which resulted in reduced dielectric permittivity combined with the tunability of intrinsic dielectric response.

引用

页数：8

共 43 条

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