Enhancing Resonant Second-Harmonic Generation in Bilayer WSe2 by Layer-Dependent Exciton-Polaron Effect

被引:1
作者
Cha, Soonyoung [1 ]
Ouyang, Tianyi [1 ]
Taniguchi, Takashi [2 ]
Watanabe, Kenji [3 ]
Gabor, Nathaniel M. [1 ]
Lui, Chun Hung [1 ]
机构
[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
[3] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba 3050044, Japan
基金
美国国家科学基金会;
关键词
Second-harmonic generation; Two-dimensional materials; Exciton; Layered transition metal dichalcogenides; Nonlinear optical phenomena; MOS2; SPIN;
D O I
10.1021/acs.nanolett.4c04544
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) materials serve as exceptional platforms for controlled second-harmonic generation (SHG). Current approaches to SHG control often depend on nonresonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate an SHG enhancement concept that leverages strong exciton resonance and a layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. This method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only similar to 3% of the critical breakdown field. Our results highlight SHG sensitivity to carrier density and type, offering a new tool for manipulating SHG and probing quantum states in 2D excitonic systems.
引用
收藏
页码:14847 / 14853
页数:7
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