Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity

被引：0
作者：
Liu, Huan [1 ,2 ]
Li, Dongya [1 ,2 ]
Gong, Zhi [1 ,2 ]
Du, Peiyuan [1 ,2 ]
Yu, Fei [1 ,2 ]
Jin, Chengji [1 ,2 ]
Ke, Mengnan [3 ]
Yu, Xiao [1 ,2 ]
Liu, Yan [1 ,2 ]
Hao, Yue [1 ,2 ]
Han, Genquan [1 ,2 ]
机构：
[1] Xidian Univ, Sch MicroElect, Xian, Peoples R China
[2] Xidian Univ, Hangzhou Inst Technol, Hangzhou 311231, Peoples R China
[3] Yokohama Natl Univ, Inst Multidisciplinary Sci, Yokohama 2400067, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 02期
基金：
浙江省自然科学基金; 中国国家自然科学基金;
关键词：
Superlattices; Annealing; Hafnium oxide; Films; Capacitors; Temperature measurement; Grain size; Electrodes; Tin; Standards; Back end of line (BEOL); ferroelectric film; low thermal budget; superlattice; TiO2 seed layer; POLARIZATION; HF0.5ZR0.5O2; RELIABILITY; PERFORMANCE; ENDURANCE; FILMS;
D O I：
10.1109/TED.2024.3524953
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the influence of TiO2 seed layers in ferroelectric capacitors with HfZrOx (HZO) solid-solution and HfO2/ZrO2 superlattice structures has been explored. Due to the insertion of the TiO2 seed layer, significant enhancement in ferroelectric properties and reduction in coercive field (E-c) has been achieved. In addition, samples with the TiO2 seed layer exhibit decent ferroelectricity at a low crystalline annealing temperature of 300(degrees)C, making them compatible with back-end-of-line (BEOL) processes. Especially, the HfO2/ZrO2 superlattice ferroelectric thin film with a 1-nm TiO2 seed layer exhibits outstanding remnant polarization (2 Pr ) of approximately 51.4 mu C/cm(2) with a low E-c of 0.9 MV/cm, reducing the operating voltage to 1.2 V, and demonstrating stable endurance larger than 10(9) cycles. This study presents a robust approach with BEOL process compatibility for enhancing both the ferroelectric properties and the reliability of future ferroelectric devices.
引用
收藏
页码：665 / 670
页数：6
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