Entropy measures of silicon nanotubes using degree based topological indices

被引:0
作者
Fraz, Hafiz Muhammad [1 ]
Ali, Kashif [1 ]
Nadeem, Muhammad Faisal [1 ]
机构
[1] COMSATS Univ Islamabad, Dept Math, Lahore Campus, Lahore, Pakistan
关键词
topological index; silicon nanotube; nanotechnology; BOND CONNECTIVITY INDEX; CARBON NANOTUBE;
D O I
10.1088/1402-4896/ad94b4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nanotechnology is an emerging field in the modern era, and nanotubes, tube-like structures derived from various materials, including carbon, silicon, and boron, are extensively used in nanosciences, particularly in medicine, energy, and the synthesis of new compounds. The physical stability and chemical properties of nanotubes are topics of significant interest due to their high impact. A topological index is an invariant numerical value associated with certain physicochemical properties and aids in exploring key insights into a chemical compound. In this paper, we compute several degree-based topological indices, including the first Zagreb, second Zagreb, multiplicative first Zagreb, multiplicative second Zagreb, hyper Zagreb, atom-bond connectivity, sum connectivity, and Sombor indices. We also calculate the related entropies for two silicon nanotubes. A numerical comparison of the different values of the indices above and a regression model is also established.
引用
收藏
页数:15
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