The effect of p-doping in mid- and long-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors

被引：0

作者：

Ting, David Z. ^{[1
]}

Soibel, Alexander ^{[1
]}

Khoshakhlagh, Arezou ^{[1
]}

Keo, Sam A. ^{[1
]}

Fisher, Anita M. ^{[1
]}

Pepper, Brian J. ^{[1
]}

Rafol, Sir B. ^{[1
]}

Hill, Cory J. ^{[1
]}

Gunapala, Sarath D. ^{[1
]}

机构：

[1] CALTECH, NASA Jet Prop Lab, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 19期

基金：

美国国家航空航天局;

关键词：

II SUPERLATTICE;

D O I：

10.1063/5.0236130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare mid-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors (CBIRDs) with n-type and p-type absorbers and also report results on a series of five long-wavelength CBIRD samples that have the same structure but with a systematic variation in the absorber doping profile. Our studies show that devices containing p-type absorber layers can take advantage of the longer electron diffusion length for enhanced quantum efficiency (QE) compared to those that use only n-type absorbers, while the dark current performance is better for devices that use only n-type absorbers. Under typical operating conditions, the use of p-type absorbers manifests in higher bulk and surface generation-recombination (G-R) dark current in mid-wavelength detectors and in higher trap-assisted tunneling dark current in long-wavelength detectors. The QE/dark current trade-off is observed in both mid- and long-wavelength detectors, but it is less pronounced in the mid-wavelength devices.

引用

页数：6

共 31 条

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