A Novel Mechanism Based on Oxygen Vacancies to Describe Isobutylene and Ammonia Sensing of p-Type Cr2O3 and Ti-Doped Cr2O3 Thin Films

被引：0
作者：
Zhou, Pengfei [1 ,2 ,3 ]
Tsang, Jone-Him [2 ]
Blackman, Chris [2 ]
Shen, Yanbai [3 ]
Liang, Jinsheng [1 ]
Covington, James A. [4 ]
Saffell, John [5 ]
Danesh, Ehsan [6 ]
机构：
[1] Hebei Univ Technol, Key Lab Special Funct Mat Ecol Environm & Informat, Minist Educ, Tianjin 300130, Peoples R China
[2] UCL, Dept Chem, London WC1H 0AJ, England
[3] Northeastern Univ, Sch Resources & Civil Engn, Shenyang 110819, Peoples R China
[4] Univ Warwick, Sch Engn, Coventry CV4 7AL, England
[5] NosmoTech Ltd, Cambridge CB3 0AZ, England
[6] Adv Sensing Technol Ltd, London N12 8FA, England
来源：
CHEMOSENSORS | 2024年 / 12卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
Cr2O3; Ti-doped; AACVD; thin films; gas sensor; mechanism; CR-2-XTIXO3; FILMS; VAPOR-DEPOSITION; GAS; SENSOR;
D O I：
10.3390/chemosensors12100218
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Gas sensors based on metal oxide semiconductors (MOS) have been widely used for the detection and monitoring of flammable and toxic gases. In this paper, p-type Cr2O3 and Ti-doped Cr2O3 (CTO) thin films were synthesized using an aerosol-assisted chemical vapor deposition (AACVD) method. Detailed analysis of the thin films deposited, including structural information, their elemental composition, oxidation state, and morphology, was investigated using XRD, Raman analysis, SEM, and XPS. All the gas sensors based on pristine Cr2O3 and CTO exhibited a reversible response and good sensitivity to isobutylene (C4H8) and ammonia (NH3) gases. Doping Ti into the Cr2O3 lattice improves the response of the CTO-based sensors to C4H8 and NH3. We describe a novel mechanism for the gas sensitivity of p-type metal oxides based on variations in the oxygen vacancy concentration.
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页数：12
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